NOIS1SM0250A-HHC ON Semiconductor, NOIS1SM0250A-HHC Datasheet - Page 3

• Manufacturer Part Number: NOIS1SM0250A-HHC
• Manufacturer: ON Semiconductor

Specifications of NOIS1SM0250A-HHC

• Lead Free Status / Rohs Status: Supplier Unconfirmed

Specifications
Table 1. General Specifications
Table 2. Electro-optical Specifications
Pixel architecture
Pixel size
Resolution
Pixel rate
Shutter type
Frame rate
Extended dynamic range
Programmable gain
Supply voltage V
Operational temperature
range
Package
Detector technology
Pixel structure
Photodiode
Sensitive area format
Pixel size
Spectral range
Quantum efficiency x fill
factor
Full well capacity
Linear range within +1%
Output signal swing
Conversion gain
Temporal noise
Dynamic range
FPN
PRNU (photo response
nonuniformity)
Average dark current
signal
DSNU (dark signal nonuni-
formity)
MTF
Parameter
Parameter
DD
Programmable between x1, x2, x4, x8
Local: 1 = 0.39% of response
Global: 1 = 1.3% of response
CMOS active pixel sensor
High fill factor photodiode
Specification (Typical)
3 transistor active pixel
3-transistor active pixel
29 full frames/second
200 nm to 1000 nm
1 < 0.1% of full well
4 diodes per pixel
4 diodes per pixel
512 by 512 pixels
–40 °C to +85 °C
25 m
512 × 512 pixels
Horizontal: 0.36
Maximum 35%
128K electrons
74 dB (5000:1)
311K electrons
3805 e
0 °C to +65 °C
Specification
Double slope
Vertical: 0.39
25 × 25 m
84-pin JLCC
Electronic
4750 e
5.7 V/e
(typical)
1.68 V
8 Mps
76 e
2
5 V
Rev. 7 | www.onsemi.com | Page 3 of 22
× 25 m
-
/s RMS
-
-
/s
-
2
2
Radiation-tolerant pixel design
4 photodiodes for improved MTF
Integration time is variable, steps equal to the row
readout time
Selectable through pins G0 and G1
STAR250 (quartz glass lid, air in cavity)
STAR250BK7 (BK7G18 glass lid, N
Radiation-tolerant pixel design
4 photodiodes for improved MTF
See
Above 20% between 450 nm and 750 nm
(Metal FillFactor (MFF) is 63%)
When output amplifier gain = 1
When output amplifier gain = 1
When output amplifier gain = 1
When output amplifier gain = 1 near dark
Dominated by kTC
At the analog output
Measured local, on central image area 50% of pixels in
the dark
Measured in central image area 50% of pixels, at Qsat/2
At RT
At RT, scale linearly with integration time
at 600 nm.
Figure 2
and
Figure 3
Comment
Remarks
NOIS1SM0250A
2
in cavity)