MT18HTS25672RHZ-80EH1 Micron Technology Inc, MT18HTS25672RHZ-80EH1 Datasheet - Page 20

• Manufacturer Part Number: MT18HTS25672RHZ-80EH1
• Description: MODULE DDR2 SDRAM 2GB 200SORDIMM
• Manufacturer: Micron Technology Inc
• Series: -r

Specifications of MT18HTS25672RHZ-80EH1

• Memory Type: DDR2 SDRAM
• Memory Size: 2GB
• Speed: 800MT/s
• Features: -
• Package / Case: 200-SORDIMM
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Figure 4: Hysteresis Applied to Temperature Around Trip Points
Table 21: Hysteresis Applied to Alarm Window Bits in the Temperature Register
Temperature Format
PDF: 09005aef83f287c1
hts18c256x72rhz.pdf - Rev. A 3/10 EN
Condition
Clears
Sets
Above window bit
Below window bit
Notes:
The temperature trip point registers and temperature readout register use a 2’s comple-
ment format to enable negative numbers. The least significant bit (LSB) is equal to
0.0625°C or 0.25°C, depending on which register is referenced. For example, assuming
an LSB of 0.0625°C:
• A value of 0x018C would equal 24.75°C
• A value of 0x06C0 would equal 108°C
• A value of 0x1E74 would equal –24.75°C
Temperature
1. T
2. T
3. Hyst is the value set in the hysteresis bits of the configuration register.
Gradient
Falling
Rising
T
T
Below Alarm Window Bit
H
L
H
L
is the value set in the alarm temperature lower boundary trip register.
2
is the value set in the alarm temperature upper boundary trip register.
1
Temperature Sensor with Serial Presence-Detect EEPROM
2GB (x72, ECC, DR) 200-Pin DDR2 SDRAM SORDIMM
Critical Temperature
T
L
- Hyst
20
T
L
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Temperature
Gradient
T
Falling
Rising
H
Above Alarm Window Bit
-
Hyst
3
© 2010 Micron Technology, Inc. All rights reserved.
T
L
-
Critical Temperature
Hyst
T
H
- Hyst
T
H