MT18HTS25672RHZ-80EH1 Micron Technology Inc, MT18HTS25672RHZ-80EH1 Datasheet - Page 11

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MT18HTS25672RHZ-80EH1

Manufacturer Part Number
MT18HTS25672RHZ-80EH1
Description
MODULE DDR2 SDRAM 2GB 200SORDIMM
Manufacturer
Micron Technology Inc
Series
-r
Datasheet

Specifications of MT18HTS25672RHZ-80EH1

Memory Type
DDR2 SDRAM
Memory Size
2GB
Speed
800MT/s
Features
-
Package / Case
200-SORDIMM
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Table 8: DDR2 I
Values shown for MT47H256M8THN DDR2 SDRAM only and are computed from values specified in the 2Gb TwinDie (256
Meg x 8) component data sheet
PDF: 09005aef83f287c1
hts18c256x72rhz.pdf - Rev. A 3/10 EN
Parameter
Operating bank interleave read current: All device banks interleaving
reads; I
(I
HIGH between valid commands; Address bus inputs are stable during deselects;
Data bus inputs are switching
DD
),
t
RC =
OUT
= 0mA; BL = 4, CL = CL (I
t
RC (I
DD
DD
),
t
RRD =
Specifications and Conditions – 2GB (Continued)
t
RRD (I
DD
DD
),
), AL =
t
RCD =
t
RCD (I
t
RCD (I
2GB (x72, ECC, DR) 200-Pin DDR2 SDRAM SORDIMM
DD
DD
) - 1 ×
); CKE is HIGH, S# is
11
t
CK (I
DD
);
t
CK =
Micron Technology, Inc. reserves the right to change products or specifications without notice.
t
CK
Combined
Symbol
I
CDD7
© 2010 Micron Technology, Inc. All rights reserved.
IDD Specifications
-80E
3123
2628
-667
Units
mA

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