MT18HTS25672RHZ-80EH1 Micron Technology Inc, MT18HTS25672RHZ-80EH1 Datasheet - Page 19

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MT18HTS25672RHZ-80EH1

Manufacturer Part Number
MT18HTS25672RHZ-80EH1
Description
MODULE DDR2 SDRAM 2GB 200SORDIMM
Manufacturer
Micron Technology Inc
Series
-r
Datasheet

Specifications of MT18HTS25672RHZ-80EH1

Memory Type
DDR2 SDRAM
Memory Size
2GB
Speed
800MT/s
Features
-
Package / Case
200-SORDIMM
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Table 20: Configuration Register Bit Descriptions (Continued)
PDF: 09005aef83f287c1
hts18c256x72rhz.pdf - Rev. A 3/10 EN
10:9
Bit
6
7
8
Description
Alarm window lock bit
0: Alarm trips are not locked and can be changed
1: Alarm trips are locked and cannot be changed
Critical trip lock bit
0: Critical trip is not locked and can be changed
1: Critical trip is locked and cannot be changed
Shutdown mode
0: Enabled
1: Shutdown
Hysteresis enable
00: Disable
01: Enable at 1.5°C
10: Enable at 3°C
11: Enable at 6°C
Temperature Sensor with Serial Presence-Detect EEPROM
2GB (x72, ECC, DR) 200-Pin DDR2 SDRAM SORDIMM
19
Notes
The shutdown mode is a power-saving mode that dis-
ables the temperature sensor.
When enabled, a hysteresis is applied to temperature
movement around the trip points (see Figure 4
(page 20)). As an example, if the hysteresis register
is enabled to a delta of 6°C, the preset trip points will
toggle when the temperature reaches the program-
med value. These values will reset when the tempera-
ture drops below the trip points minus the set
hysteresis level. In this case, this would be critical tem-
perature minus 6°C.
The hysteresis is applied to both the above alarm win-
dow and the below alarm window bits found in the
read-only temperature register (see Table 21
(page 20)). EVENT# is also affected by this register.
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2010 Micron Technology, Inc. All rights reserved.

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