FDT86113LZ Fairchild Semiconductor, FDT86113LZ Datasheet - Page 3

• Manufacturer Part Number: FDT86113LZ
• Description: MOSFET Power 100V N-Channel PowerTrench MOSFET
• Manufacturer: Fairchild Semiconductor

Specifications of FDT86113LZ

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 100 mOhms
• Forward Transconductance Gfs (max / Min): 8 S
• Drain-source Breakdown Voltage: 100 V
• Continuous Drain Current: 3.3 A
• Power Dissipation: 2.2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-223
• Gate Charge Qg: 4.1 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details

FDT86113LZ Rev.C
Typical Characteristics
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
12
12
Figure 3. Normalized On- Resistance
9
6
3
0
Figure 1.
9
6
3
0
-75
1
0
Figure 5. Transfer Characteristics
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
I
V
DS
D
-50
GS
= 3.3 A
vs Junction Temperature
= 5 V
= 10 V
T
V
V
1
-25
J
DS
GS
On-Region Characteristics
,
2
JUNCTION TEMPERATURE (
,
, GATE TO SOURCE VOLTAGE (V)
DRAIN TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
T
0
J
V
V
V
= 150
GS
GS
GS
2
25
= 10 V
= 4 V
= 4.5 V
P
s
o
C
3
T
50
T
J
J
= -55
3
= 25 °C unless otherwise noted
T
J
75
= 25
o
P
C
s
o
4
o
V
100 125 150
V
C )
C
GS
GS
4
= 3 V
= 3.5 V
5
5
3
0.001
0.01
500
400
300
200
100
0.1
20
10
5
4
3
2
1
0
0
Figure 2.
Figure 4.
1
0.2
Forward Voltage vs Source Current
2
0
vs Drain Current and Gate Voltage
Figure 6.
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
GS
V
V
= 0 V
GS
SD
T
0.4
, BODY DIODE FORWARD VOLTAGE (V)
V
= 3 V
Normalized On-Resistance
J
On-Resistance vs Gate to
GS
= 150
I
Source Voltage
D
4
3
Source to Drain Diode
,
,
GATE TO SOURCE VOLTAGE (V)
DRAIN CURRENT (A)
T
I
D
J
o
= 3.3 A
= 25
C
0.6
o
C
P
s
V
6
6
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
GS
T
V
J
= 3.5 V
GS
= 125
0.8
T
J
= 4.5 V
= -55
o
C
o
T
8
C
9
J
1.0
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V
= 25
V
GS
GS
= 4 V
= 10 V
o
C
P
s
1.2
10
12