FDT86113LZ Fairchild Semiconductor, FDT86113LZ Datasheet

MOSFET Power 100V N-Channel PowerTrench MOSFET

FDT86113LZ

Manufacturer Part Number
FDT86113LZ
Description
MOSFET Power 100V N-Channel PowerTrench MOSFET
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FDT86113LZ

Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
100 mOhms
Forward Transconductance Gfs (max / Min)
8 S
Drain-source Breakdown Voltage
100 V
Continuous Drain Current
3.3 A
Power Dissipation
2.2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-223
Gate Charge Qg
4.1 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / Rohs Status
 Details

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©2011 Fairchild Semiconductor Corporation
FDT86113LZ Rev.C
FDT86113LZ
N-Channel PowerTrench
100 V, 3.3 A, 100 m:
Features
„ Max r
„ Max r
„ High performance trench technology for extremely low r
„ High power and current handling capability in a widely used
„ HBM ESD protection level > 3 KV typical (Note 4)
„ 100% UIL tested
„ RoHS Compliant
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
V
V
I
E
P
T
R
R
D
DS
GS
AS
D
J
TJC
TJA
surface mount package
, T
Symbol
Device Marking
STG
DS(on)
DS(on)
86113LZ
= 100 m: at V
= 145 m: at V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
SOT-223
D
GS
GS
FDT86113LZ
= 10 V, I
= 4.5 V, I
-Pulsed
Device
G
D
D
= 3.3 A
= 2.7 A
T
D
®
C
= 25 °C unless otherwise noted
MOSFET
S
Parameter
DS(on)
Package
SOT-223
1
T
T
General Description
This N-Channel logic Level MOSFETs are produced using
Fairchild Semiconductor‘s advanced Power Trench
that has been special tailored to minimize the on-state resistance
and yet maintain superior switching performance.
has been added to enhance ESD voltage level.
Application
„ DC - DC Switch
A
A
= 25 °C
= 25 °C
Reel Size
13 ’’
(Note 1a)
(Note 1b)
(Note 1a)
(Note 3)
Tape Width
12 mm
-55 to +150
Ratings
100
±20
3.3
2.2
1.0
12
12
55
9
www.fairchildsemi.com
March 2011
2500 units
Quantity
®
G-S zener
process
Units
°C/W
mJ
°C
W
V
V
A

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FDT86113LZ Summary of contents

Page 1

... TJC R Thermal Resistance, Junction to Ambient TJA Package Marking and Ordering Information Device Marking Device 86113LZ FDT86113LZ ©2011 Fairchild Semiconductor Corporation FDT86113LZ Rev.C ® MOSFET General Description This N-Channel logic Level MOSFETs are produced using = 3 Fairchild Semiconductor‘s advanced Power Trench = 2 that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance ...

Page 2

... Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0%. ° 3. Starting 0.3 mH The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. FDT86113LZ Rev °C unless otherwise noted J Test Conditions = 250 PA 250 PA, referenced to 25 °C ...

Page 3

... JUNCTION TEMPERATURE ( , T J Figure 3. Normalized On- Resistance vs Junction Temperature 12 P PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 150 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics FDT86113LZ Rev °C unless otherwise noted 3 100 125 150 - 0.001 ...

Page 4

... Gate Charge Characteristics 125 0.01 0 TIME IN AVALANCHE (ms) AV Figure 9. Unclamped Inductive Switching Capability Limited by package CASE TEMPERATURE ( , T C Figure 11. Maximum Continuous Drain Current vs Case Temperature FDT86113LZ Rev °C unless otherwise noted 100 Figure 10 100 125 150 400 100 MHz 0 DRAIN TO SOURCE VOLTAGE (V) DS Figure 8 ...

Page 5

... Figure 13. 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 - Figure 14. Junction-to-Ambient Transient Thermal Response Curve FDT86113LZ Rev °C unless otherwise noted PULSE WIDTH (sec) Single Pulse Maximum Power Dissipation SINGLE PULSE 118 C RECTANGULAR PULSE DURATION (sec) ...

Page 6

... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDT86113LZ Rev.C Power-SPM™ ® ® PowerTrench SM PowerXS™ Programmable Active Droop™ ® QFET QS™ Quiet Series™ ...

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