PSMN0R9-25YLC,115 NXP Semiconductors, PSMN0R9-25YLC,115 Datasheet - Page 9

• Manufacturer Part Number: PSMN0R9-25YLC,115
• Description: MOSFET Power N-Ch 25V 0.99 mOhms
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PSMN0R9-25YLC,115

• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.99 mOhms
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 137 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: LFPAK
• Gate Charge Qg: 110 nC
• Minimum Operating Temperature: - 55 C
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 0.99 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 1.95V @ 1mA
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Input Capacitance (ciss) @ Vds: 6775pF @ 12V
• Power - Max: 137W
• Mounting Type: Surface Mount
• Lead Free Status / Rohs Status: Details
• Other names: 934065074115

NXP Semiconductors
PSMN0R9-25YLC
Product data sheet
Fig 12. Drain-source on-state resistance as a function
Fig 14. Gate charge waveform definitions
(m)
R
DS on
5
4
3
2
1
0
of drain current; typical values
0
V
V
V
V
GS(pl)
DS
GS(th)
GS
Q
25
GS1
2.4
I
Q
D
N-channel 25 V 0.99 mΩ logic level MOSFET in LFPAK using NextPower technology
GS
Q
GS2
50
Q
G(tot)
Q
GD
4.5
75
V
GS
All information provided in this document is subject to legal disclaimers.
2.6
003a a f 526
003aaa508
I
(V) = 2.8
D
(A)
3.5
3.0
10
100
Rev. 2 — 4 July 2011
Fig 13. Normalized drain-source on-state resistance
Fig 15. Gate-source voltage as a function of gate
V
(V)
GS
a
1.5
0.5
10
2
1
0
8
6
4
2
0
-60
factor as a function of junction temperature
charge; typical values
0
30
0
PSMN0R9-25YLC
5V
V
GS
=4.5V
60
60
12V
V
DS
120
90
= 20V
© NXP B.V. 2011. All rights reserved.
10V
003a a f 527
003a a f 533
Q
T
G
j
( C)
(nC)
180
120
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