PSMN0R9-25YLC,115 NXP Semiconductors, PSMN0R9-25YLC,115 Datasheet - Page 3

• Manufacturer Part Number: PSMN0R9-25YLC,115
• Description: MOSFET Power N-Ch 25V 0.99 mOhms
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PSMN0R9-25YLC,115

• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.99 mOhms
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 137 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: LFPAK
• Gate Charge Qg: 110 nC
• Minimum Operating Temperature: - 55 C
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 0.99 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 1.95V @ 1mA
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Input Capacitance (ciss) @ Vds: 6775pF @ 12V
• Power - Max: 137W
• Mounting Type: Surface Mount
• Lead Free Status / Rohs Status: Details
• Other names: 934065074115

NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
PSMN0R9-25YLC
Product data sheet
Symbol
V
V
V
I
I
P
T
T
T
V
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
Fig 1.
stg
j
sld(M)
DS
DGR
GS
tot
ESD
DS(AL)S
Continuous current is limited by package
(A)
I
D
400
320
240
160
80
0
mounting base temperature
Continuous drain current as a function of
0
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
peak soldering temperature
electrostatic discharge voltage
source current
peak source current
non-repetitive drain-source
avalanche energy
50
N-channel 25 V 0.99 mΩ logic level MOSFET in LFPAK using NextPower technology
(1)
100
150
All information provided in this document is subject to legal disclaimers.
T
003a a f 521
mb
(  C)
200
Rev. 2 — 4 July 2011
Conditions
25 °C ≤ T
25 °C ≤ T
T
T
pulsed; t
see
T
MM (JEDEC JESD22-A115)
T
pulsed; t
V
V
see
mb
mb
mb
mb
GS
sup
Figure 4
Figure 3
= 25 °C; see
= 100 °C; see
= 25 °C; see
= 25 °C
= 10 V; T
≤ 25 V; unclamped; R
p
p
Fig 2.
j
j
≤ 10 µs; T
≤ 10 µs; T
≤ 175 °C
≤ 175 °C; R
P
(%)
j(init)
der
120
80
40
0
Figure 1
Figure 2
function of mounting base temperature
Normalized total power dissipation as a
= 25 °C; I
0
Figure 1
mb
mb
GS
= 25 °C;
= 25 °C
= 20 kΩ
GS
D
50
PSMN0R9-25YLC
= 100 A;
= 50 Ω;
100
[1]
[1]
[1]
Min
-
-
-20
-
-
-
-
-55
-55
-
920
-
-
-
150
© NXP B.V. 2011. All rights reserved.
T
mb
175
Max
25
25
20
100
100
1563
272
175
260
-
100
1563
342
03na19
(°C)
200
Unit
V
V
V
A
A
A
W
°C
°C
°C
V
A
A
mJ
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