PSMN0R9-25YLC,115 NXP Semiconductors, PSMN0R9-25YLC,115 Datasheet - Page 12
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PSMN0R9-25YLC,115
Manufacturer Part Number
PSMN0R9-25YLC,115
Description
MOSFET Power N-Ch 25V 0.99 mOhms
Manufacturer
NXP Semiconductors
Series
-r
Datasheet
1.PSMN0R9-25YLC115.pdf
(15 pages)
Specifications of PSMN0R9-25YLC,115
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.99 mOhms
Drain-source Breakdown Voltage
25 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
100 A
Power Dissipation
137 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
LFPAK
Gate Charge Qg
110 nC
Minimum Operating Temperature
- 55 C
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
0.99 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
25V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
1.95V @ 1mA
Gate Charge (qg) @ Vgs
110nC @ 10V
Input Capacitance (ciss) @ Vds
6775pF @ 12V
Power - Max
137W
Mounting Type
Surface Mount
Lead Free Status / Rohs Status
Details
Other names
934065074115
NXP Semiconductors
8. Revision history
Table 7.
PSMN0R9-25YLC
Product data sheet
Document ID
PSMN0R9-25YLC v.2
Modifications:
PSMN0R9-25YLC v.1
Revision history
N-channel 25 V 0.99 mΩ logic level MOSFET in LFPAK using NextPower technology
20110704
20101202
Release date
•
Various changes to content.
All information provided in this document is subject to legal disclaimers.
Data sheet status
Product data sheet
Product data sheet
Rev. 2 — 4 July 2011
Change notice
-
-
PSMN0R9-25YLC
Supersedes
PSMN0R9-25YLC v.1
-
© NXP B.V. 2011. All rights reserved.
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