PSMN0R9-25YLC,115 NXP Semiconductors, PSMN0R9-25YLC,115 Datasheet - Page 7

• Manufacturer Part Number: PSMN0R9-25YLC,115
• Description: MOSFET Power N-Ch 25V 0.99 mOhms
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PSMN0R9-25YLC,115

• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.99 mOhms
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 137 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: LFPAK
• Gate Charge Qg: 110 nC
• Minimum Operating Temperature: - 55 C
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 0.99 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 1.95V @ 1mA
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Input Capacitance (ciss) @ Vds: 6775pF @ 12V
• Power - Max: 137W
• Mounting Type: Surface Mount
• Lead Free Status / Rohs Status: Details
• Other names: 934065074115

NXP Semiconductors
Table 6.
PSMN0R9-25YLC
Product data sheet
Symbol
t
t
t
t
Q
Source-drain diode
V
t
Q
t
t
d(on)
r
d(off)
f
rr
a
b
Fig 6.
SD
oss
r
(A)
I
D
100
80
60
40
20
0
function of drain-source voltage; typical values
Output characteristics; drain current as a
0
10
Characteristics
Parameter
turn-on delay time
rise time
turn-off delay time
fall time
output charge
source-drain voltage
reverse recovery time
recovered charge
reverse recovery rise time
reverse recovery fall time
0.25
4.5
2.8
3.0
N-channel 25 V 0.99 mΩ logic level MOSFET in LFPAK using NextPower technology
…continued
0.5
0.75
V
GS
All information provided in this document is subject to legal disclaimers.
003a a f 524
(V) =
V
DS
(V)
2.6
2.4
2.2
Conditions
V
R
V
T
I
see
I
V
V
dI
see
V
dI
see
S
S
j
DS
GS
GS
GS
GS
G(ext)
1
S
S
= 25 °C
= 25 A; V
= 25 A; dI
/dt = -100 A/µs; V
/dt = -100 A/µs; V
Rev. 2 — 4 July 2011
Figure 17
Figure 18
Figure 18
= 12 V; R
= 0 V; V
= 0 V; V
= 0 V; I
= 0 V; I
= 4.7 Ω
GS
S
S
S
DS
DS
/dt = -100 A/µs;
= 25 A;
L
25 A;
= 0 V; T
Fig 7.
= 0.5 Ω; V
= 12 V; f = 1 MHz;
= 12 V
R
(m)
DS on
DS
DS
8
6
4
2
0
j
of gate-source voltage; typical values
= 12 V;
= 12 V;
Drain-source on-state resistance as a function
= 25 °C;
0
GS
= 4.5 V;
4
PSMN0R9-25YLC
Min
-
-
-
-
-
-
-
-
-
-
8
Typ
42.5
74
103.5
55
31.57
0.8
48
60
26.3
21.7
12
© NXP B.V. 2011. All rights reserved.
003a a f 525
V
GS
-
Max
-
-
-
-
1.1
-
-
-
-
(V)
16
Unit
ns
ns
ns
ns
nC
V
ns
nC
ns
ns
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