PSMN0R9-25YLC,115 NXP Semiconductors, PSMN0R9-25YLC,115 Datasheet - Page 5

• Manufacturer Part Number: PSMN0R9-25YLC,115
• Description: MOSFET Power N-Ch 25V 0.99 mOhms
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PSMN0R9-25YLC,115

• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.99 mOhms
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 137 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: LFPAK
• Gate Charge Qg: 110 nC
• Minimum Operating Temperature: - 55 C
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 0.99 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 1.95V @ 1mA
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Input Capacitance (ciss) @ Vds: 6775pF @ 12V
• Power - Max: 137W
• Mounting Type: Surface Mount
• Lead Free Status / Rohs Status: Details
• Other names: 934065074115

NXP Semiconductors
5. Thermal characteristics
Table 5.
PSMN0R9-25YLC
Product data sheet
Symbol
R
Fig 5.
th(j-mb)
Z
(K/W)
th(j-mb)
10
10
10
-1
-2
-3
1
10
Transient thermal impedance from junction to mounting base as a function of pulse duration
-6
 = 0.5
0.2
0.05
0.02
0.1
Thermal characteristics
s ingle s hot
Parameter
thermal resistance from junction to
mounting base
N-channel 25 V 0.99 mΩ logic level MOSFET in LFPAK using NextPower technology
10
-5
All information provided in this document is subject to legal disclaimers.
10
-4
Rev. 2 — 4 July 2011
10
Conditions
see
-3
Figure 5
10
-2
PSMN0R9-25YLC
Min
-
10
P
-1
t
p
Typ
0.45
T
© NXP B.V. 2011. All rights reserved.
t
003a af 523
p
 =
(s )
Max
0.55
t
T
p
t
1
Unit
K/W
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