PSMN0R9-25YLC,115 NXP Semiconductors, PSMN0R9-25YLC,115 Datasheet

MOSFET Power N-Ch 25V 0.99 mOhms

PSMN0R9-25YLC,115

Manufacturer Part Number
PSMN0R9-25YLC,115
Description
MOSFET Power N-Ch 25V 0.99 mOhms
Manufacturer
NXP Semiconductors
Series
-r
Datasheet

Specifications of PSMN0R9-25YLC,115

Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.99 mOhms
Drain-source Breakdown Voltage
25 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
100 A
Power Dissipation
137 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
LFPAK
Gate Charge Qg
110 nC
Minimum Operating Temperature
- 55 C
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
0.99 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
25V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
1.95V @ 1mA
Gate Charge (qg) @ Vgs
110nC @ 10V
Input Capacitance (ciss) @ Vds
6775pF @ 12V
Power - Max
137W
Mounting Type
Surface Mount
Lead Free Status / Rohs Status
 Details
Other names
934065074115
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
Table 1.
Symbol
V
I
P
T
Static characteristics
R
D
j
DS
tot
DSon
PSMN0R9-25YLC
N-channel 25 V 0.99 mΩ logic level MOSFET in LFPAK using
NextPower technology
Rev. 2 — 4 July 2011
High reliability Power SO8 package,
qualified to 175°C
Optimised for 4.5V Gate drive utilising
NextPower Superjunction technology
DC-to-DC converters
Lithium-ion battery protection
Load switching
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
junction temperature
drain-source on-state
resistance
Conditions
25 °C ≤ T
T
T
V
T
V
T
mb
mb
j
j
GS
GS
= 25 °C; see
= 25 °C; see
= 25 °C; see
= 25 °C; see
= 4.5 V; I
= 10 V; I
j
≤ 175 °C
D
D
= 25 A;
= 25 A;
Figure 12
Figure 12
Ultra low QG, QGD and QOSS for high
system efficiencies at low and high
loads
Ultra low Rdson and low parasitic
inductance
Power OR-ing
Server power supplies
Sync rectifier
Figure 1
Figure 2
[1]
Min
-
-
-
-55
-
-
Product data sheet
Typ
-
-
-
-
0.95 1.25 mΩ
0.75 0.99 mΩ
Max Unit
25
100
272
175
V
A
W
°C

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PSMN0R9-25YLC,115 Summary of contents

Page 1

... PSMN0R9-25YLC N-channel 25 V 0.99 mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 2 — 4 July 2011 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment ...

Page 2

... DS see Figure 15 total gate charge see DS see Figure 14 Simplified outline SOT669 (LFPAK; Power-SO8) Description plastic single-ended surface-mounted package; 4 leads All information provided in this document is subject to legal disclaimers. Rev. 2 — 4 July 2011 PSMN0R9-25YLC Min Typ = Figure 14 Figure 15; Graphic symbol mb G mbb076 © ...

Page 3

... Figure 3 003a a f 521 120 P der (%) 150 200 (  Fig 2. Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 2 — 4 July 2011 PSMN0R9-25YLC Min - = 20 kΩ -20 [1] - [1] Figure ° -55 -55 - 920 ...

Page 4

... Safe operating area; continuous and peak drain currents as a function of drain-source voltage PSMN0R9-25YLC Product data sheet ( Limit All information provided in this document is subject to legal disclaimers. Rev. 2 — 4 July 2011 PSMN0R9-25YLC 003a a f 535 ( =10  100  100 (V) DS © NXP B.V. 2011. All rights reserved. 003a a f 522 ...

Page 5

... Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration PSMN0R9-25YLC Product data sheet Conditions see Figure All information provided in this document is subject to legal disclaimers. Rev. 2 — 4 July 2011 PSMN0R9-25YLC Min Typ Max - 0.45 0.55 003a af 523 t p  ...

Page 6

... Figure see Figure see Figure 14; see Figure see D DS see Figure MHz °C; see Figure 16 j All information provided in this document is subject to legal disclaimers. Rev. 2 — 4 July 2011 PSMN0R9-25YLC Min Typ Max 22 1.05 1.41 1. 2.25 0 100 - - 100 - - 100 - 0.95 1. 2.125 - 0.75 ...

Page 7

... A/µ see Figure 18 003a a f 524 8 2 (m 2 (V) DS Fig 7. of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 4 July 2011 PSMN0R9-25YLC Min Typ = 4 42 103 31. ° 003a a f 525 ...

Page 8

... I (A) D Fig 9. 003a a f 529 V GS (th) (V) Max (V) GS Fig 11. Gate-source threshold voltage as a function of All information provided in this document is subject to legal disclaimers. Rev. 2 — 4 July 2011 PSMN0R9-25YLC 100 150 Transfer characteristics; drain current as a function of gate-source voltage; typical values ...

Page 9

... V (V) = 2.8 GS 3.0 3.5 10 4.5 75 100 ( Fig 13. Normalized drain-source on-state resistance Q GD 003aaa508 Fig 15. Gate-source voltage as a function of gate All information provided in this document is subject to legal disclaimers. Rev. 2 — 4 July 2011 PSMN0R9-25YLC =4.5V GS 1.5 1 0 factor as a function of junction temperature ( ...

Page 10

... Product data sheet 003a a f 531 ( (V) DS Fig 17. Source current as a function of source-drain All information provided in this document is subject to legal disclaimers. Rev. 2 — 4 July 2011 PSMN0R9-25YLC 100 150 0.3 0.6 0.9 voltage; typical values 003a a f 444 003a a f 534 1.2 V ...

Page 11

... D max 4.41 2.2 0.9 0.25 0.30 4.10 4.20 3.62 2.0 0.7 0.19 0.24 3.80 REFERENCES JEDEC JEITA MO-235 All information provided in this document is subject to legal disclaimers. Rev. 2 — 4 July 2011 PSMN0R9-25YLC detail (1) (1) ( 5.0 3.3 6.2 0.85 1.3 1.27 4.8 3.1 5 ...

Page 12

... NXP Semiconductors N-channel 25 V 0.99 mΩ logic level MOSFET in LFPAK using NextPower technology 8. Revision history Table 7. Revision history Document ID Release date PSMN0R9-25YLC v.2 20110704 • Modifications: Various changes to content. PSMN0R9-25YLC v.1 20101202 PSMN0R9-25YLC Product data sheet Data sheet status Change notice ...

Page 13

... Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 2 — 4 July 2011 PSMN0R9-25YLC © NXP B.V. 2011. All rights reserved ...

Page 14

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 2 — 4 July 2011 PSMN0R9-25YLC Trademarks © NXP B.V. 2011. All rights reserved ...

Page 15

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: PSMN0R9-25YLC All rights reserved. Date of release: 4 July 2011 ...

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