FDMC8200S Fairchild Semiconductor, FDMC8200S Datasheet - Page 7

• Manufacturer Part Number: FDMC8200S
• Description: MOSFET Power 30V Dual N-Channel PowerTrench MOSFET
• Manufacturer: Fairchild Semiconductor

Specifications of FDMC8200S

• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 20 mOhms
• Forward Transconductance Gfs (max / Min): 43 S
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 18 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: Power 33
• Module Configuration: Dual
• Continuous Drain Current Id: 18A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 0.02ohm
• Rds(on) Test Voltage Vgs: 10V
• Lead Free Status / Rohs Status: Details

FDMC8200S Rev.C4
©2011 Fairchild Semiconductor Corporation
Typical Characteristics (Q2 N-Channel)
27
18
27
18
1.6
1.4
1.2
1.0
0.8
9
0
9
0
0.0
Figure 14. On- Region Characteristics
Figure 16. Normalized On-Resistance
1.0
-75
Figure 18. Transfer Characteristics
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
I
V
D
DS
-50
GS
= 8.5 A
vs Junction Temperature
= 5 V
1.5
= 10 V
V
V
DS
T
GS
-25
J
,
,
V
, GATE TO SOURCE VOLTAGE (V)
DRAIN TO SOURCE VOLTAGE (V)
JUNCTION TEMPERATURE (
GS
0.5
T
2.0
= 3.5 V
J
0
V
V
V
= 150
GS
GS
GS
= 10 V
= 4.5 V
= 4 V
25
μ
o
s
C
2.5
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
50
1.0
3.0
75
T
J
T
= -55
V
J
o
100 125 150
= 25
GS
C )
3.5
o
= 3 V
C
o
C
μ
s
1.5
4.0
T
J
7
= 25 °C unless otherwise noted
Figure 15. Normalized on-Resistance vs Drain
0.001
0.01
100
0.1
80
60
40
20
30
10
0
4
3
2
1
1
Figure 17. On-Resistance vs Gate to
0.0
Forward Voltage vs Source Current
2
0
Figure 19. Source to Drain Diode
V
GS
Current and Gate Voltage
= 0 V
V
0.2
SD
V
T
GS
J
, BODY DIODE FORWARD VOLTAGE (V)
V
= 150
GS
= 3 V
Source Voltage
I
4
D
,
,
GATE TO SOURCE VOLTAGE (V)
T
DRAIN CURRENT (A)
I
D
o
J
0.4
C
= 8.5 A
= 125
9
T
J
V
= -55
o
GS
C
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
T
0.6
6
= 4.5 V
J
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
o
= 25
C
T
V
J
GS
= 25
o
C
= 3.5 V
0.8
18
o
C
V
8
V
GS
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GS
= 4 V
1.0
= 10 V
μ
s
μ
s
1.2
10
27