FDMS3604AS Fairchild Semiconductor, FDMS3604AS Datasheet - Page 10

• Manufacturer Part Number: FDMS3604AS
• Description: MOSFET Power 30V Dual N-Channel PowerTrench MOSFET
• Manufacturer: Fairchild Semiconductor

Specifications of FDMS3604AS

• Configuration: Dual (MOSFET)
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 8 mOhms
• Forward Transconductance Gfs (max / Min): 61 S
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 13 A
• Power Dissipation: 2.2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: Power 56
• Module Configuration: Dual
• Continuous Drain Current Id: 40A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 0.0058ohm
• Lead Free Status / Rohs Status: Details

©2011 Fairchild Semiconductor Corporation
FDMS3604AS Rev.C4
Typical Characteristics
SyncFET Schottky body diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in parallel
with PowerTrench MOSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
with a MOSFET. Figure 27 shows the reverse recovery
characteristic of the FDMS3604AS.
25
20
15
10
-5
diode reverse recovery characteristic
5
0
Figure 27. FDMS3604AS SyncFET body
0
50
TIME (ns)
100
didt = 300 A/
(continued)
150
μ
s
200
10
Schottky barrier diodes exhibit significant leakage at high tem-
perature and high reverse voltage. This will increase the power
in the device.
10
10
10
10
10
Figure 28. SyncFET body diode reverse
leakage versus drain-source voltage
-2
-3
-4
-5
-6
0
5
V
DS
, REVERSE VOLTAGE (V)
10
T
T
T
J
J
J
15
= 100
= 125
= 25
o
o
o
C
C
C
20
25
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