FDC86244 Fairchild Semiconductor, FDC86244 Datasheet - Page 3

• Manufacturer Part Number: FDC86244
• Description: MOSFET Power 150V N-Channel PowerTrench MOSFET
• Manufacturer: Fairchild Semiconductor

Specifications of FDC86244

• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 144 mOhms
• Forward Transconductance Gfs (max / Min): 6 S
• Drain-source Breakdown Voltage: 150 V
• Continuous Drain Current: 2.3 A
• Power Dissipation: 1.6 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SSOT-6
• Lead Free Status / Rohs Status: Details

©2010 Fairchild Semiconductor Corporation
FDC86244 Rev.C
Typical Characteristics
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
10
10
Figure 3. Normalized On- Resistance
8
6
4
2
0
8
6
4
2
0
Figure 1.
-75
1
0
Figure 5. Transfer Characteristics
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
I
V
D
DS
GS
-50
= 2.3 A
vs Junction Temperature
= 5 V
= 10 V
V
V
T
2
1
DS
-25
J
GS
On-Region Characteristics
,
, GATE TO SOURCE VOLTAGE (V)
,
JUNCTION TEMPERATURE (
DRAIN TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
GS
0
V
= 6 V
GS
3
2
= 10 V
T
25
μ
J
s
= 150
T
50
J
o
4
3
C
= 25 °C unless otherwise noted
75
μ
s
T
o
J
100 125 150
C )
= -55
T
V
4
5
J
GS
V
V
= 25
GS
GS
= 4.5 V
o
C
= 5 V
= 4 V
o
C
6
5
3
0.001
0.01
500
400
300
200
100
0.1
10
5
4
3
2
1
0
Figure 2.
Figure 4.
0
1
0.2
Forward Voltage vs Source Current
0
2
vs Drain Current and Gate Voltage
Figure 6.
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
GS
V
T
GS
V
= 0 V
J
SD
= 150
T
= 4 V
J
0.4
, BODY DIODE FORWARD VOLTAGE (V)
Normalized On-Resistance
V
2
= 25
On-Resistance vs Gate to
GS
I
Source Voltage
4
D
o
Source to Drain Diode
,
C
,
GATE TO SOURCE VOLTAGE (V)
o
DRAIN CURRENT (A)
C
V
GS
0.6
4
= 4.5 V
μ
T
s
J
6
= 125
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
I
D
= 2.3 A
0.8
T
6
J
o
C
= -55
T
J
o
= 25
C
8
V
1.0
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GS
8
V
o
V
GS
C
= 5 V
GS
= 10 V
= 6 V
μ
s
1.2
10
10