FDC86244 Fairchild Semiconductor, FDC86244 Datasheet

MOSFET Power 150V N-Channel PowerTrench MOSFET

FDC86244

Manufacturer Part Number
FDC86244
Description
MOSFET Power 150V N-Channel PowerTrench MOSFET
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FDC86244

Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
144 mOhms
Forward Transconductance Gfs (max / Min)
6 S
Drain-source Breakdown Voltage
150 V
Continuous Drain Current
2.3 A
Power Dissipation
1.6 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SSOT-6
Lead Free Status / Rohs Status
 Details

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Part Number:
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Quantity:
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©2010 Fairchild Semiconductor Corporation
FDC86244 Rev.C
FDC86244
N-Channel Power Trench
150 V, 2.3 A, 144 mΩ
Features
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
V
V
I
E
P
T
R
R
D
DS
GS
AS
D
J
θJC
θJA
Max r
Max r
High performance trench technology for extremely low r
High power and current handling capability in a widely used
surface mount package
Fast switching speed
100% UIL Tested
RoHS Compliant
, T
Symbol
Device Marking
STG
DS(on)
DS(on)
.244
= 144 mΩ at V
= 188 mΩ at V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
D
D
Pin 1
SuperSOT
GS
GS
S
= 10 V, I
= 6 V, I
-Pulsed
FDC86244
Device
TM
D
D
D
= 1.9 A
-6
= 2.3 A
T
D
A
®
= 25 °C unless otherwise noted
G
Parameter
MOSFET
DS(on)
Package
SSOT-6
1
General Description
This
Semiconductor‘s advanced Power Trench
been optimized for r
ruggedness.
Applications
Load Switch
Synchronous Rectifier
Primary Switch
N-Channel
S
D
D
Reel Size
4
5
6
7 ’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 3)
MOSFET
DS(on)
Tape Width
, switching performance and
is
8 mm
-55 to +150
Ratings
produced using Fairchild
150
±20
2.3
1.6
0.8
30
78
10
12
3
2
1
®
process that has
November 2010
G
D
D
www.fairchildsemi.com
3000 units
Quantity
Units
°C/W
mJ
°C
W
V
V
A

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FDC86244 Summary of contents

Page 1

... Thermal Resistance, Junction to Case θJC R Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device .244 FDC86244 ©2010 Fairchild Semiconductor Corporation FDC86244 Rev.C ® MOSFET General Description = 2.3 A This N-Channel D Semiconductor‘s advanced Power Trench = 1 been optimized for r ruggedness ...

Page 2

... R is determined by the user's board design. θJC θCA 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2 Starting 1 ©2010 Fairchild Semiconductor Corporation FDC86244 Rev °C unless otherwise noted J Test Conditions = 250 μ 250 μA, referenced to 25 ° ...

Page 3

... JUNCTION TEMPERATURE ( , T J Figure 3. Normalized On- Resistance vs Junction Temperature 10 μ PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 150 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2010 Fairchild Semiconductor Corporation FDC86244 Rev °C unless otherwise noted μ 4 Figure 2. 500 400 300 200 100 ...

Page 4

... LIMITED BY r DS(on) SINGLE PULSE T = MAX RATED 0. 175 C/W θ 0.001 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area ©2010 Fairchild Semiconductor Corporation FDC86244 Rev °C unless otherwise noted J 400 = 50 V 100 V = 100 2 100 C J 1.0 0.5 0 Figure 10 ...

Page 5

... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.05 0.1 0.02 0.01 0.01 0.001 - Figure 13. Juncton-to-Ambient Transient Thermal Response Curve ©2010 Fairchild Semiconductor Corporation FDC86244 Rev °C unless otherwise noted J SINGLE PULSE 175 C/W θ RECTANGULAR PULSE DURATION (sec NOTES: DUTY FACTOR ...

Page 6

... Dimensional Outline and Pad Layout ©2010 Fairchild Semiconductor Corporation FDC86244 Rev.C 6 www.fairchildsemi.com ...

Page 7

... Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2010 Fairchild Semiconductor Corporation FDC86244 Rev.C F-PFS™ Power-SPM™ ® FRFET PowerTrench SM Global Power Resource PowerXS™ Green FPS™ Programmable Active Droop™ ...

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