FDMC7678 Fairchild Semiconductor, FDMC7678 Datasheet - Page 2

• Manufacturer Part Number: FDMC7678
• Description: MOSFET Power 30V N-Channel PowerTrench MOSFET
• Manufacturer: Fairchild Semiconductor

Specifications of FDMC7678

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 5.3 mOhms
• Forward Transconductance Gfs (max / Min): 90 S
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 17.5 A
• Power Dissipation: 31 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: MLP 3.3 x 3.3
• Lead Free Status / Rohs Status: Details

©2011 Fairchild Semiconductor Corporation
FDMC7678 Rev. C1
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
NOTES:
1. R
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %.
3. As an N-ch device, the negative V
4. E
BV
ΔBV
I
I
V
r
g
C
C
C
R
t
t
t
t
Q
Q
Q
V
t
Q
ΔV
DSS
GSS
d(on)
r
d(off)
f
rr
DS(on)
FS
the user's board design.
GS(th)
SD
ΔT
ΔT
iss
oss
rss
g
g(TOT)
gs
gd
rr
Symbol
θJA
AS
DSS
GS(th)
DSS
J
J
of 54 mJ is based on starting T
is determined with the device mounted on a 1 in
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current, Forward V
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
GS
J
= 25
rating is for low duty cycle pulse occurence only. No continuous rating is implied.
Parameter
o
C, L = 0.3 mH, I
2
T
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
J
= 25 °C unless otherwise noted
AS
a. 53 °C/W when mounted on
a 1 in
= 19 A, V
2
pad of 2 oz copper
DD
= 27 V, V
I
I
V
V
I
V
V
V
T
V
D
D
D
V
V
V
V
V
f = 1MHz
V
V
I
DS
GS
J
GS
GS
GS
GS
DD
F
DD
GS
GS
GS
DS
= 250 μA, V
= 250 μA, referenced to 25 °C
GS
GS
= 250 μA, referenced to 25 °C
= 125 °C
= 17.5 A, di/dt = 100 A/μs
= 24 V, V
= 20 V, V
= V
= 10 V, I
= 4.5 V, I
= 10 V, I
= 5 V, I
= 15 V, V
= 15 V, I
= 10 V, R
= 0 V to 10 V
= 0 V to 4.5 V
= 0 V, I
= 0 V, I
GS
2
DS
= 10 V.
Test Conditions
, I
D
S
S
D
D
D
D
GS
DS
= 1.9 A
= 17.5 A
GS
D
= 17.5 A
GS
GEN
= 250 μA
= 17.5 A
= 17.5 A
= 17.5 A
= 15.0 A
= 0 V
= 0 V
= 0 V
= 0 V
= 6 Ω
V
I
D
DD
= 17.5 A
= 15 V
(Note 2)
(Note 2)
θJC
is guaranteed by design while R
b.125 °C/W when mounted on
a minimum pad of 2 oz copper
Min
1.2
30
1810
0.7
0.8
Typ
620
1.5
4.2
5.1
5.7
30
13
0.7
4.4
3.9
90
21
75
10
26
28
14
-5
4
3
2410
θCA
Max
820
1.2
1.2
110
100
3.0
5.3
6.8
7.2
2.5
49
23
www.fairchildsemi.com
19
10
41
10
39
19
1
is determined by
mV/°C
mV/°C
Units
mΩ
nC
μA
nA
pF
pF
pF
ns
nC
nC
nC
nC
Ω
ns
ns
ns
ns
V
V
V
S