FDMC7678 Fairchild Semiconductor, FDMC7678 Datasheet

MOSFET Power 30V N-Channel PowerTrench MOSFET

FDMC7678

Manufacturer Part Number
FDMC7678
Description
MOSFET Power 30V N-Channel PowerTrench MOSFET
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FDMC7678

Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
5.3 mOhms
Forward Transconductance Gfs (max / Min)
90 S
Drain-source Breakdown Voltage
30 V
Continuous Drain Current
17.5 A
Power Dissipation
31 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
MLP 3.3 x 3.3
Lead Free Status / Rohs Status
 Details

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDMC7678
Manufacturer:
FAIRCHILD/ON
Quantity:
20 000
Part Number:
FDMC7678
0
Company:
Part Number:
FDMC7678
Quantity:
18 865
©2011 Fairchild Semiconductor Corporation
FDMC7678 Rev. C1
FDMC7678
N-Channel Power Trench
30 V, 19.5 A, 5.3 mΩ
Features
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
V
V
I
E
P
T
R
R
D
J
DS
GS
AS
D
θJC
θJA
Max r
Max r
High performance technology for extremely low r
Termination is Lead-free and RoHS Compliant
, T
Symbol
Device Marking
STG
FDMC7678
1 2 3 4
DS(on)
DS(on)
8
= 5.3 mΩ at V
= 6.8 mΩ at V
Top
7
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
6
5
GS
GS
MLP 3.3x3.3
= 10 V, I
= 4.5 V, I
FDMC7678
-Pulsed
-Continuous
-Continuous (Package limited)
-Continuous (Silicon limited)
Device
D
D
= 17.5 A
= 15.0 A
G
T
A
®
= 25 °C unless otherwise noted
S
D D D D
Parameter
DS(on)
Bottom
MOSFET
S
S
MLP 3.3x3.3
Package
Pin 1
1
T
T
T
T
T
General Description
This
Semiconductor’s advanced Power Trench
been especially tailored to minimize the on-state resistance. This
device is well suited for Power Management and load switching
applications common in Notebook Computers and Portable
Battery Packs.
Application
C
A
C
A
C
= 25 °C
= 25 °C
= 25 °C
= 25 °C
= 25 °C
DC - DC Buck Converters
Notebook battery power management
Load switch in Notebook
N-Channel
Reel Size
13 ’’
D
D
D
D
(Note 1a)
(Note 1a)
(Note 1a)
(Note 3)
(Note 4)
MOSFET
6
7
8
5
Tape Width
12 mm
is produced using Fairchild
-55 to +150
Ratings
19.5
17.5
±20
2.3
4.0
53
30
63
70
54
31
®
process that has
4
3
2
1
www.fairchildsemi.com
3000 units
Quantity
June 2011
G
S
S
S
Units
°C/W
mJ
°C
W
V
V
A

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FDMC7678 Summary of contents

Page 1

... Thermal Resistance, Junction to Case θJC R Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device FDMC7678 FDMC7678 ©2011 Fairchild Semiconductor Corporation FDMC7678 Rev. C1 ® MOSFET General Description = 17.5 A This N-Channel D Semiconductor’s advanced Power Trench = 15 been especially tailored to minimize the on-state resistance. This ...

Page 2

... Pulse Test: Pulse Width < 300 μs, Duty cycle < 2 N-ch device, the negative V rating is for low duty cycle pulse occurence only. No continuous rating is implied based on starting 0.3 mH ©2011 Fairchild Semiconductor Corporation FDMC7678 Rev °C unless otherwise noted J Test Conditions = 250 μ 250 μA, referenced to 25 °C I ...

Page 3

... Figure 3. Normalized On Resistance vs Junction Temperature 70 μ PULSE DURATION = DUTY CYCLE = 0.5% MAX 150 1.0 1.5 2 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2011 Fairchild Semiconductor Corporation FDMC7678 Rev 25°C unless otherwise noted μ 1.5 2.0 Figure 100 125 150 Figure 4. 100 ...

Page 4

... Switching Capability 100 10 THIS AREA IS 1 LIMITED BY r DS(on) SINGLE PULSE 0 MAX RATED 125 C/W θ 0.01 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area ©2011 Fairchild Semiconductor Corporation FDMC7678 Rev 25°C unless otherwise noted J 3000 = 1000 100 100 C J ...

Page 5

... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 0.0005 - Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2011 Fairchild Semiconductor Corporation FDMC7678 Rev 25°C unless otherwise noted J SINGLE PULSE 125 C/W θ RECTANGULAR PULSE DURATION (sec NOTES: ...

Page 6

... Dimensional Outline and Pad Layout ©2011 Fairchild Semiconductor Corporation FDMC7678 Rev www.fairchildsemi.com ...

Page 7

... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2011 Fairchild Semiconductor Corporation FDMC7678 Rev. C1 ® * PDP SPM™ Power-SPM™ ® PowerTrench PowerXS™ SM Programmable Active Droop™ ® QFET QS™ ...

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