PIC18F25K22-I/SO Microchip Technology Inc., PIC18F25K22-I/SO Datasheet - Page 100
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PIC18F25K22-I/SO
Manufacturer Part Number
PIC18F25K22-I/SO
Description
32KB, Flash, 1536bytes-RAM, 8-bit Family, nanoWatt XLP, 28 SOIC .300in TUBE
Manufacturer
Microchip Technology Inc.
Datasheet
1.PIC18F45K22-IP.pdf
(496 pages)
Specifications of PIC18F25K22-I/SO
A/d Inputs
17-Channel, 10-Bit
Comparators
2
Cpu Speed
16 MIPS
Eeprom Memory
256 Bytes
Input Output
24
Interface
I2C/SPI/UART/USART
Memory Type
Flash
Number Of Bits
8
Package Type
28-pin SOIC
Programmable Memory
32K Bytes
Ram Size
1.5K Bytes
Speed
64 MHz
Temperature Range
–40 to 125 °C
Timers
3-8-bit, 4-16-bit
Voltage, Range
1.8-5.5 V
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
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PIC18(L)F2X/4XK22
6.4
The minimum erase block is 32 words or 64 bytes. Only
through the use of an external programmer, or through
ICSP™ control, can larger blocks of program memory
be bulk erased. Word erase in the Flash array is not
supported.
When
microcontroller itself, a block of 64 bytes of program
memory is erased. The Most Significant 16 bits of the
TBLPTR<21:6> point to the block being erased. The
TBLPTR<5:0> bits are ignored.
The EECON1 register commands the erase operation.
The EEPGD bit must be set to point to the Flash
program memory. The WREN bit must be set to enable
write operations. The FREE bit is set to select an erase
operation.
The write initiate sequence for EECON2, shown as
steps 4 through 6 in
Memory Erase
accidental writes. This is sometimes referred to as a
long write.
A long write is necessary for erasing the internal Flash.
Instruction execution is halted during the long write
cycle. The long write is terminated by the internal
programming timer.
EXAMPLE 6-2:
DS41412D-page 100
Required
Sequence
initiating
Erasing Flash Program Memory
ERASE_BLOCK
Sequence”, is used to guard against
an
Section 6.4.1 “Flash Program
ERASING A FLASH PROGRAM MEMORY BLOCK
MOVLW
MOVWF
MOVLW
MOVWF
MOVLW
MOVWF
BSF
BCF
BSF
BSF
BCF
MOVLW
MOVWF
MOVLW
MOVWF
BSF
BSF
erase
sequence
CODE_ADDR_UPPER
TBLPTRU
CODE_ADDR_HIGH
TBLPTRH
CODE_ADDR_LOW
TBLPTRL
EECON1, EEPGD
EECON1, CFGS
EECON1, WREN
EECON1, FREE
INTCON, GIE
55h
EECON2
0AAh
EECON2
EECON1, WR
INTCON, GIE
from
Preliminary
the
6.4.1
The sequence of events for erasing a block of internal
program memory is:
1.
2.
3.
4.
5.
6.
7.
8.
; load TBLPTR with the base
; address of the memory block
; point to Flash program memory
; access Flash program memory
; enable write to memory
; enable block Erase operation
; disable interrupts
; write 55h
; write 0AAh
; start erase (CPU stall)
; re-enable interrupts
Load Table Pointer register with address of
block being erased.
Set the EECON1 register for the erase operation:
• set EEPGD bit to point to program memory;
• clear the CFGS bit to access program memory;
• set WREN bit to enable writes;
• set FREE bit to enable the erase.
Disable interrupts.
Write 55h to EECON2.
Write 0AAh to EECON2.
Set the WR bit. This will begin the block erase
cycle.
The CPU will stall for duration of the erase
(about 2 ms using internal timer).
Re-enable interrupts.
FLASH PROGRAM MEMORY
ERASE SEQUENCE
2010 Microchip Technology Inc.
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