DG417DY-E3 Siliconix / Vishay, DG417DY-E3 Datasheet - Page 8

• Manufacturer Part Number: DG417DY-E3
• Description: Switch, CMOS Analog; CMOS Analog; 8-Pin Narrow SOIC; 20 Ohms; 0.25 nA (Max.)
• Manufacturer: Siliconix / Vishay

Specifications of DG417DY-E3

• Charge Injection: 60 pC
• Current, Source, Off-state: 0.25 nA
• Number Of Channels: 1-SPST
• Package: 8-Pin SOIC N
• Power Consumption: 0.350 μW
• Resistance, Drain To Source On: 20 Ohms
• Time, Turn-on: 100 ns
• Voltage, Supply: 44 V
• On-resistance - Rds(on): 20 Ω
• Fast Switching Action - Ton: 100 ns
• Ultra Low Power Requirements — Pd: 35 nW
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

DG417/418/419
Vishay Siliconix
TEST CIRCUITS
www.vishay.com
8
V
S
R
V
R
g
O
3 V
L
R
= 50 Ω
g
0.8 V
Figure 6. Crosstalk (DG419)
C = RF bypass
C
S
IN
+ 5 V
GND
X
V
TA LK
L
S
S
IN
+ 5 V
1
2
GND
V
L
Isolation = 20 log
- 15 V
- 15 V
V+
V-
V
D
S
+ 15 V
- 15 V
V+
V-
R
g
D
0 V, 2.4 V
= 50 Ω
V
V
S
O
10 nF
C
C
C
L
Figure 5. Charge Injection
V
Figure 8. Insertion Loss
C
O
50 Ω
S
IN
GND
+ 5 V
V
L
+ 15 V
- 15 V
V
V+
V-
S
R
D
g
= 50 Ω
V
0 V, 2.4 V
O
IN
C
C
X
OFF
Figure 7. Off Isolation
R
L
C
S
IN
V
O
Off Isolation = 20 log
GND
+ 5 V
V
L
Q = ΔV
ON
S-71241–Rev. F, 25-Jun-07
+ 15 V
Document Number: 70051
- 15 V
V-
V+
O
x C
D
L
C
V
V
S
O
C
OFF
ΔV
O
R
V
O
L