DG417DY-E3 Siliconix / Vishay, DG417DY-E3 Datasheet - Page 6

• Manufacturer Part Number: DG417DY-E3
• Description: Switch, CMOS Analog; CMOS Analog; 8-Pin Narrow SOIC; 20 Ohms; 0.25 nA (Max.)
• Manufacturer: Siliconix / Vishay

Specifications of DG417DY-E3

• Charge Injection: 60 pC
• Current, Source, Off-state: 0.25 nA
• Number Of Channels: 1-SPST
• Package: 8-Pin SOIC N
• Power Consumption: 0.350 μW
• Resistance, Drain To Source On: 20 Ohms
• Time, Turn-on: 100 ns
• Voltage, Supply: 44 V
• On-resistance - Rds(on): 20 Ω
• Fast Switching Action - Ton: 100 ns
• Ultra Low Power Requirements — Pd: 35 nW
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

DG417/418/419
Vishay Siliconix
TYPICAL CHARACTERISTICS 2
www.vishay.com
6
100 µA
100 nA
10 mA
10 µA
1 mA
1 µA
120
100
80
70
60
50
40
80
60
40
20
0
100
- 55 - 40 - 20
± 10
Power Supply Currents vs. Switching Frequency
V+ = 15 V, V- = - 15 V
V
L
V+ = 15 V , V- = - 15 V
V
L
= 5 V , V
V- = 0 V
V
V
Switching Time vs. Supply Voltages
= 5 V , V
L
IN
± 11
Switching Time vs. Temperature
= 5 V
= 3 V
1 k
IN
IN
I+, I-
= 5 V , 50 % D Cycle
± 12
= 3 V Pulse
0
f – Frequency (Hz)
Supply Voltage (V)
Temperature (°C)
10 k
2 0
± 13
4 0
I
100 k
L
5 °C, unless otherwise noted
6 0
± 14
t
t
OFF
ON
t
8 0
t
OFF
ON
1 M
± 15
100
120
10 M
± 16
100 nA
100 pA
0.1 pA
10 nA
10 pA
1 nA
1 pA
1 µA
140
120
100
130
120
100
110
80
60
40
20
90
80
70
60
50
40
30
0
- 55 - 40
100
10
V+ = 16.5 V, V- = - 16.5 V
V
Crosstalk and Off Isolation vs. Frequency
L
V+ = 15 V
V- = - 15 V
V
= 5 V , V
V- = 0 V
V
V
L
1 k
L
IN
11
= 5 V
Supply Current vs. Temperature
= 5 V
= 3 V
- 20
Source 1
DG419
IN
Switching Time vs. V+
= 0 V
10 k
12
V+ Supply Voltage (V)
0
f – Frequency (Hz)
Temperature (°C)
2 0
100 k
13
I+, I-
S-71241–Rev. F, 25-Jun-07
I
4 0
Document Number: 70051
GND
DG417/418/419
Source 2
1 M
6 0
14
8 0
t
t
10 M
OFF
ON
15
100
100 M
120
16