DG417DY-E3 Siliconix / Vishay, DG417DY-E3 Datasheet - Page 2

• Manufacturer Part Number: DG417DY-E3
• Description: Switch, CMOS Analog; CMOS Analog; 8-Pin Narrow SOIC; 20 Ohms; 0.25 nA (Max.)
• Manufacturer: Siliconix / Vishay

Specifications of DG417DY-E3

• Charge Injection: 60 pC
• Current, Source, Off-state: 0.25 nA
• Number Of Channels: 1-SPST
• Package: 8-Pin SOIC N
• Power Consumption: 0.350 μW
• Resistance, Drain To Source On: 20 Ohms
• Time, Turn-on: 100 ns
• Voltage, Supply: 44 V
• On-resistance - Rds(on): 20 Ω
• Fast Switching Action - Ton: 100 ns
• Ultra Low Power Requirements — Pd: 35 nW
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

DG417/418/419
Vishay Siliconix
Notes:
a. Signals on S
b. All leads welded or soldered to PC Board.
c. Derate 6 mW/°C above 75 °C.
d. Derate 6.5 mW/°C above 75 °C.
e. Derate 12 mW/°C above 75 °C.
www.vishay.com
2
ORDERING INFORMATION
DG417/DG418
DG419
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltages Referenced V+ to V-
GND
V
Digital Inputs
Current , (Any Terminal) Continuous
Current, S or D (Pulsed at 1 ms, 10 % duty cycle)
Storage Temperature
Power Dissipation (Package)
L
- 40 to 85 °C
- 40 to 85 °C
Temp Range
X
a
, V
, D
S
X
, V
, or IN
D
X
exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b
(AK Suffix)
(DJ, DY Suffix)
8-Pin Plastic MiniDIP
8-Pin Narrow SOIC
8-Pin CerDIP
8-Pin Plastic MiniDIP
8-Pin Plastic MiniDIP
8-Pin Narrow SOIC
8-Pin Narrow SOIC
Package
e
d
c
or 30 mA, whichever occurs first
(GND - 0.3) to (V+) + 0.3
(V-) - 2 to (V+) + 2
- 65 to 150
- 65 to 125
DG417DY-T1-E3
DG418DY-T1-E3
DG419DY-T1-E3
Part Number
DG417DJ-E3
DG418DJ-E3
DG417DY-E3
DG418DY-E3
DG419DJ-E3
DG419DY-E3
DG417DY-T1
DG418DY-T1
DG419DY-T1
Limit
100
400
400
600
DG417DJ
DG418DJ
DG417DY
DG418DY
DG419DJ
DG419DY
44
25
30
S-71241–Rev. F, 25-Jun-07
Document Number: 70051
Unit
mW
mA
°C
V