DG417DY-E3 Siliconix / Vishay, DG417DY-E3 Datasheet - Page 3

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DG417DY-E3

Manufacturer Part Number
DG417DY-E3
Description
Switch, CMOS Analog; CMOS Analog; 8-Pin Narrow SOIC; 20 Ohms; 0.25 nA (Max.)
Manufacturer
Siliconix / Vishay
Datasheet

Specifications of DG417DY-E3

Charge Injection
60 pC
Current, Source, Off-state
0.25 nA
Number Of Channels
1-SPST
Package
8-Pin SOIC N
Power Consumption
0.350 μW
Resistance, Drain To Source On
20 Ohms
Time, Turn-on
100 ns
Voltage, Supply
44 V
On-resistance - Rds(on)
20 Ω
Fast Switching Action - Ton
100 ns
Ultra Low Power Requirements — Pd
35 nW
Lead Free Status / Rohs Status
RoHS Compliant part Electrostatic Device

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DG417DY-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
SCHEMATIC DIAGRAM (TYPICAL CHANNEL)
Document Number: 70051
S-71241–Rev. F, 25-Jun-07
SPECIFICATIONS
Parameter
Analog Switch
Analog Signal Range
Drain-Source
On-Resistance
Switch Off Leakage Current
Channel Off Leakage
Current
Digital Control
Input Current V
Input Current V
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Transition Time
Break-Before-Make
Time Delay (DG403)
Charge Injection
Source Off Capacitance
Drain Off Capacitance
Channel On Capacitance
GND
V
V
IN
V+
V-
L
IN
IN
Low
High
e
a
V
Symbol
r
t
ANALOG
C
C
C
TRANS
I
I
DS(on)
I
t
S(off)
D(off)
D(on)
t
OFF
S(off)
D(off)
D(on)
I
I
ON
t
Q
IH
IL
D
V
V+ = 16.5 V, V- = - 16.5 V
S1
C
V+ = 16.5, V- = - 16.5 V
R
R
R
L
Unless Otherwise Specified
L
L
L
See Switching Time
f = 1 MHz, V
f = 1 MHz, V
V
V
=
I
= 10 nF, V
V
= 300 Ω, C
= 300 Ω, C
= 300 Ω, C
S
S
S1
V+ = 13.5 V, V- = - 13.5 V
L
±
V
V
= - 10 mA, V
= V
V
V+ = 15 V, V- = - 15 V
= 5 V, V
D
S
Test Circuit
= V
10 V, V
S
=
Test Conditions
=
D
=
S2
±
±
=
Level
Drive
Shift/
±
15.5 V
15.5 V
±
=
gen
10 V
S2
IN
L
L
L
S
S
±
15.5 V
= 35 pF
= 35 pF
= 35 pF
=
=
= 2.4 V, 0.8 V
=
= 0 V, R
10 V
D
0
0
±
Figure 1.
=
V
V
10 V
±
12.5 V
gen
= 0 Ω
DG417
DG418
DG419
DG417
DG418
DG419
DG417
DG418
DG417
DG418
DG419
DG419
DG417
DG418
DG417
DG418
DG419
f
Temp
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
Full
b
0.005
0.005
Typ
- 0.1
- 0.1
- 0.1
- 0.4
- 0.4
100
20
60
13
60
30
35
8
8
c
- 55 to 125 °C
- 0.25
- 0.25
- 0.75
- 0.75
Min
- 0.4
- 0.5
- 0.5
- 15
- 20
- 20
- 60
- 40
- 60
5
A Suffix
d
DG417/418/419
Max
0.25
0.25
0.75
0.75
175
250
145
210
175
250
0.4
0.5
0.5
15
35
45
20
20
60
40
60
Vishay Siliconix
d
- 0.25
- 0.25
- 0.75
- 0.75
Min
- 40 to 85 °C
- 0.4
- 0.5
- 0.5
- 15
- 12
- 10
- 12
V+
V-
- 5
- 5
5
D Suffix
d
www.vishay.com
Max
0.25
0.25
0.75
0.75
175
250
145
210
175
250
0.4
0.5
0.5
S
D
15
35
45
12
10
12
5
5
d
Unit
pC
nA
µA
pF
ns
V
Ω
3

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