DG417DY-E3 Siliconix / Vishay, DG417DY-E3 Datasheet - Page 4

• Manufacturer Part Number: DG417DY-E3
• Description: Switch, CMOS Analog; CMOS Analog; 8-Pin Narrow SOIC; 20 Ohms; 0.25 nA (Max.)
• Manufacturer: Siliconix / Vishay

Specifications of DG417DY-E3

• Charge Injection: 60 pC
• Current, Source, Off-state: 0.25 nA
• Number Of Channels: 1-SPST
• Package: 8-Pin SOIC N
• Power Consumption: 0.350 μW
• Resistance, Drain To Source On: 20 Ohms
• Time, Turn-on: 100 ns
• Voltage, Supply: 44 V
• On-resistance - Rds(on): 20 Ω
• Fast Switching Action - Ton: 100 ns
• Ultra Low Power Requirements — Pd: 35 nW
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

DG417/418/419
Vishay Siliconix
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25 °C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f. V
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
4
SPECIFICATIONS
SPECIFICATIONS FOR UNIPOLAR SUPPLIES
Parameter
Power Supplies
Positive Supply Current
Negative Supply Current
Logic Supply Current
Ground Current
Parameter
Analog Switch
Analog Signal Range
Drain-Source
On-Resistance
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Break-Before-Make
Time Delay
Charge Injection
Power Supplies
Positive Supply
Current
Negative Supply
Logic Supply
Current
Ground
Current
Current
IN
= input voltage to perform proper function.
e
a
Symbol
V
Symbol
r
ANALOG
I
DS(on)
GND
I
t
t
GND
I+
OFF
I-
I
ON
t
Q
I+
L
I
I-
D
L
C
R
See Switching Time Test Circuit
L
Unless Otherwise Specified
L
Unless Otherwise Specified
= 10 nF, V
V
V
= 300 Ω, C
V+ = 16.5 V, V- = - 16.5 V
L
I
V+ = 13.2 V, V
L
S
R
V+ = 15 V, V- = - 15 V
= 5 V, V
= 5 V, V
L
= - 10 mA, V
V+ = 12 V, V- = 0 V
Test Conditions
Test Conditions
= 300 Ω, C
V
V
DG419 Only
V+ = 10.8 V
IN
IN
gen
= 0 or 5 V
= 0 or 5 V
IN
IN
L
= 35 pF, V
= 2.4 V, 0.8 V
= 2.4 V, 0.8 V
= 0 V, R
L
L
D
= 5.25 V
= 35 pF
=
a
3.8
gen
S
V
=
= 0 Ω
8
f
f
V
Temp
Room
Room
Room
Room
Room
Room
Room
Room
Room
Temp
Room
Room
Room
Room
Full
Full
Full
Full
Full
b
b
- 0.0001
- 0.001
- 0.001
- 0.001
0.001
0.001
0.001
0.001
Typ
Typ
110
40
40
60
5
c
c
- 55 to 125 °C
- 55 to 125 °C
Min
Min
- 1
- 5
- 1
- 5
0
A Suffix
A Suffix
d
d
Max
Max
12
S-71241–Rev. F, 25-Jun-07
1
5
1
5
Document Number: 70051
d
d
Min
Min
- 40 to 85 °C
- 40 to 85 °C
- 1
- 5
- 1
- 5
0
D Suffix
D Suffix
d
d
Max
Max
12
1
5
1
5
d
d
Unit
Unit
µA
pC
µA
ns
V
Ω