DG417DY-E3 Siliconix / Vishay, DG417DY-E3 Datasheet

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DG417DY-E3

Manufacturer Part Number
DG417DY-E3
Description
Switch, CMOS Analog; CMOS Analog; 8-Pin Narrow SOIC; 20 Ohms; 0.25 nA (Max.)
Manufacturer
Siliconix / Vishay
Datasheet

Specifications of DG417DY-E3

Charge Injection
60 pC
Current, Source, Off-state
0.25 nA
Number Of Channels
1-SPST
Package
8-Pin SOIC N
Power Consumption
0.350 μW
Resistance, Drain To Source On
20 Ohms
Time, Turn-on
100 ns
Voltage, Supply
44 V
On-resistance - Rds(on)
20 Ω
Fast Switching Action - Ton
100 ns
Ultra Low Power Requirements — Pd
35 nW
Lead Free Status / Rohs Status
RoHS Compliant part Electrostatic Device

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DG417DY-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
DESCRIPTION
The DG417/418/419 monolithic CMOS analog switches
were designed to provide high performance switching of
analog signals. Combining low power, low leakages, high
speed, low on-resistance and small physical size, the
DG417 series is ideally suited for portable and battery
powered industrial and military applications requiring high
performance and efficient use of board space.
To achieve high-voltage ratings and superior switching
performance, the DG417 series is built on Vishay Siliconix’s
high voltage silicon gate (HVSG) process. Break-before-
make is guaranteed for the DG419, which is an SPDT
configuration. An epitaxial layer prevents latchup.
Each switch conducts equally well in both directions when
on, and blocks up to the power supply level when off.
The DG417 and DG418 respond to opposite control logic
levels as shown in the Truth Table.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 70051
S-71241–Rev. F, 25-Jun-07
GND
GND
V+
NC
S
V+
D
1
S
Dual-In-Line and SOIC
Dual-In-Line and SOIC
1
2
3
4
1
2
3
4
Top View
DG419
Top View
DG417
Precision CMOS Analog Switches
8
7
6
5
8
7
6
5
S
V-
IN
V
D
V-
IN
V
2
L
L
FEATURES
BENEFITS
APPLICATIONS
Logic "0" ≤ 0.8 V
Logic "1" ≥ 2.4 V
Logic "0" ≤ 0.8 V
Logic "1" ≥ 2.4 V
• ± 15 V Analog Signal Range
• On-Resistance - r
• Fast Switching Action - t
• Ultra Low Power Requirements - P
• TTL and CMOS Compatible
• MiniDIP and SOIC Packaging
• Wide Dynamic Range
• Low Signal Errors and Distortion
• Break-Before-Make Switching Action
• Simple Interfacing
• Reduced Board Space
• Improved Reliability
• Precision Test Equipment
• Precision Instrumentation
• Battery Powered Systems
• Sample-and-Hold Circuits
• Military Radios
• Guidance and Control Systems
• Hard Disk Drives
TRUTH TABLE
TRUTH TABLE - DG419
44 V Supply Max Rating
Logic
Logic
0
1
0
1
DS(on)
DG417
: 20 Ω
ON
SW
OFF
OFF
ON
ON
: 100 ns
1
DG417/418/419
Vishay Siliconix
D
: 35 nW
www.vishay.com
DG418
OFF
SW
OFF
ON
ON
2
RoHS*
COMPLIANT
Available
Pb-free
1

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DG417DY-E3 Summary of contents

Page 1

Precision CMOS Analog Switches DESCRIPTION The DG417/418/419 monolithic CMOS analog switches were designed to provide high performance switching of analog signals. Combining low power, low leakages, high speed, low on-resistance and small physical size, the DG417 series is ideally suited ...

Page 2

... Derate 6.5 mW/°C above 75 °C. e. Derate 12 mW/°C above 75 °C. www.vishay.com 2 Package 8-Pin Narrow SOIC 8-Pin Narrow SOIC Part Number DG417DJ DG417DJ-E3 DG418DJ DG418DJ-E3 DG417DY DG417DY-E3 DG417DY-T1 DG417DY-T1-E3 DG418DY DG418DY-E3 DG418DY-T1 DG418DY-T1-E3 DG419DJ DG419DJ-E3 DG419DY DG419DY-E3 DG419DY-T1 DG419DY-T1-E3 Limit 44 25 (GND - 0.3) to (V+) + 0.3 ...

Page 3

SCHEMATIC DIAGRAM (TYPICAL CHANNEL GND V- a SPECIFICATIONS Parameter Symbol Analog Switch e V Analog Signal Range ANALOG Drain-Source r DS(on) On-Resistance I S(off) Switch Off Leakage Current I D(off) Channel Off Leakage I D(on) ...

Page 4

DG417/418/419 Vishay Siliconix a SPECIFICATIONS Parameter Symbol Power Supplies Positive Supply Current I+ Negative Supply Current I- I Logic Supply Current L I Ground Current GND SPECIFICATIONS FOR UNIPOLAR SUPPLIES Parameter Symbol Analog Switch e V Analog Signal Range ANALOG ...

Page 5

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted – Drain V oltage ( vs. V and Supply ...

Page 6

DG417/418/419 Vishay Siliconix TYPICAL CHARACTERISTICS 2 120 Pulse L IN 100 ...

Page 7

TEST CIRCUITS V is the steady state output with the switch on ± GND - (includes fixture and stray capacitance) L ...

Page 8

DG417/418/419 Vishay Siliconix TEST CIRCUITS + GND - Ω R ...

Page 9

TEST CIRCUITS + DG417/418 GND GND ...

Page 10

DG417/418/419 Vishay Siliconix APPLICATIONS Micropower UPS Transfer Switch When V drops to 3.3 V, the DG417 changes states, CC closing SW and connecting the backup cell, as shown in 1 Figure 10. D prevents current from leaking back towards the ...

Page 11

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description ...

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