DG417DY-E3 Siliconix / Vishay, DG417DY-E3 Datasheet - Page 5

• Manufacturer Part Number: DG417DY-E3
• Description: Switch, CMOS Analog; CMOS Analog; 8-Pin Narrow SOIC; 20 Ohms; 0.25 nA (Max.)
• Manufacturer: Siliconix / Vishay

Specifications of DG417DY-E3

• Charge Injection: 60 pC
• Current, Source, Off-state: 0.25 nA
• Number Of Channels: 1-SPST
• Package: 8-Pin SOIC N
• Power Consumption: 0.350 μW
• Resistance, Drain To Source On: 20 Ohms
• Time, Turn-on: 100 ns
• Voltage, Supply: 44 V
• On-resistance - Rds(on): 20 Ω
• Fast Switching Action - Ton: 100 ns
• Ultra Low Power Requirements — Pd: 35 nW
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 70051
S-71241–Rev. F, 25-Jun-07
- 10
- 20
- 30
50
40
30
20
10
30
20
10
0
0
- 20
- 15
I
D
V+ = 15 V
V- = - 15 V
V
- 15
L
= - 10 mA
Leakage Currents vs. Analog Voltage
= 5 V
r
DS(on)
- 10
V
D
- 10
DG417/418: I
DG419: I
or V
vs. V
S
V
- 5
D
– Drain or Source V oltage (V)
- 5
– Drain V oltage (V)
D
S(off)
and Supply Voltage
D(of f)
DG417/418: I
DG419: I
0
0
, I
S( of f)
5
± 5 V
D(off)
5
(V+)
10
3.5
3.0
2.5
2.0
1.5
1.0
0.5
D(on)
± 8 V
, I
0
Input Switching Threshold vs. Supply Voltages
D(on)
± 10 V
10
5
± 12 V
± 20 V
1 5
± 15 V
10
20
15
15
20
25
V
200
150
100
- 50
L
50
40
30
20
10
= 5 V
0
0
30
V
- 15
- 15
L
= 7 V
V+ = 16.5 V
V- = - 16.5 V
V
V
L
IN
35
= 5 V
= 0 V
- 10
- 10
r
40
DS(on)
Drain Charge Injection
V
V
S
- 5
- 5
D
– Source V oltage (V)
– Drain V oltage (V)
vs. Temperature
T
DG417/418/419
A
= 125 °C
0
Vishay Siliconix
0
25 °C
C
L
5
5
- 55 °C
= 10 nF
100 pF
www.vishay.com
1 nF
500 pF
10
10
15
15
5