IDT821054PQF IDT, Integrated Device Technology Inc, IDT821054PQF Datasheet - Page 19

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IDT821054PQF

Manufacturer Part Number
IDT821054PQF
Description
IC PCM CODEC QUAD MPI 64-PQFP
Manufacturer
IDT, Integrated Device Technology Inc
Type
PCM Codec/Filterr
Datasheet

Specifications of IDT821054PQF

Data Interface
PCM Audio Interface
Number Of Adcs / Dacs
4 / 4
Sigma Delta
No
Voltage - Supply, Analog
4.75 V ~ 5.25 V
Voltage - Supply, Digital
4.75 V ~ 5.25 V
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
64-MQFP, 64-PQFP
Single Supply Voltage (typ)
5V
Single Supply Voltage (min)
4.75V
Single Supply Voltage (max)
5.25V
Package Type
PQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
821054PQF

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IDT821054 QUAD PROGRAMMABLE PCM CODEC WITH MPI INTERFACE
Note 1: In block 3 of the Coe-RAM, word 5 to word 8 are used for tone coefficients while word 1 to word 4 are used for GIS coefficients. If users do not want to change the GIS coefficient
while writing tone coefficients to the Coe-RAM, they can stop the procedure of consecutive adjacent addressing (after writing data to word 5) by pulling the CS signal to high, or they can
rewrite word 1 to word 4 with the original GIS coefficients.
3.1.6.4
data byte 9
data byte 10
data byte 11
data byte 12
data byte 13
data byte 14
data byte 15
data byte 16
• Reading from the Coe-RAM
1010,0011
0001,0010
0110,0010
After the preceding commands are executed, data will be sent out as follows:
1000,0001
data byte 1
data byte 2
data byte 3
data byte 4
data byte 5
data byte 6
data byte 7
data byte 8
data byte 9
data byte 10
data byte 11
data byte 12
data byte 13
data byte 14
data byte 15
data byte 16
• Writing to the FSK-RAM:
1111,0010
data byte 1
data byte 2
data byte 3
data byte 4
data byte 5
data byte 6
data byte 7
data byte 8
data byte 9
data byte 10
data byte 11
data byte 12
data byte 13
data byte 14
data byte 15
data byte 16
• Reading from the FSK-RAM:
0111,0010
After the preceding commands are executed, data will be sent out as follows:
1000,0001
Example of Programming the FSK-RAM
high byte of word 4 of block 3 (see Note 1)
low byte of word 4 of block 3
high byte of word 3 of block 3
low byte of word 3 of block 3
high byte of word 2 of block 3
low byte of word 2 of block 3
high byte of word 1 of block 3
low byte of word 1 of block 3
Channel Enable command
Data for GREG6 (Channel 1 is enabled for programming)
Coe-RAM read command (The address of '00010' is located in block 3, which means that block 3 will be read.)
Identification code
data read out from high byte of word 8 of block 3
data read out from low byte of word 8 of block 3
data read out from high byte of word 7 of block 3
data read out from low byte of word 7 of block 3
data read out from high byte of word 6 of block 3
data read out from low byte of word 6 of block 3
data read out from high byte of word 5 of block 3
data read out from low byte of word 5 of block 3
data read out from high byte of word 4 of block 3
data read out from low byte of word 4 of block 3
data read out from high byte of word 3 of block 3
data read out from low byte of word 3 of block 3
data read out from high byte of word 2 of block 3
data read out from low byte of word 2 of block 3
data read out from high byte of word 1 of block 3
data read out from low byte of word 1 of block 3
FSK-RAM write command (The address of '010' is located in block 3, which means that data will be written to block 3.)
high byte of word 8 of block 3
low byte of word 8 of block 3
high byte of word 7 of block 3
low byte of word 7 of block 3
high byte of word 6 of block 3
low byte of word 6 of block 3
high byte of word 5 of block 3
low byte of word 5 of block 3
high byte of word 4 of block 3
low byte of word 4 of block 3
high byte of word 3 of block 3
low byte of word 3 of block 3
high byte of word 2 of block 3
low byte of word 2 of block 3
high byte of word 1 of block 3
low byte of word 1 of block 3
FSK-RAM read command (The address of '010' is located in block 3, which means that block 3 will be read.)
Identification code
19
INDUSTRIAL TEMPERATURE RANGE

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