MT46H8M32LFB5-6IT:H Micron Technology Inc, MT46H8M32LFB5-6IT:H Datasheet - Page 38

• Manufacturer Part Number: MT46H8M32LFB5-6IT:H
• Description: MICMT46H8M32LFB5-6_IT:H MDDDR
• Manufacturer: Micron Technology Inc

Figure 12: PRECHARGE Command
BURST TERMINATE
AUTO REFRESH
PDF: 09005aef834bf85b
256mb_mobile_ddr_sdram_t36n.pdf - Rev. I 09/10 EN
Note:
BA0, BA1
The BURST TERMINATE command is used to truncate READ bursts with auto pre-
charge disabled. The most recently registered READ command prior to the BURST TER-
MINATE command will be truncated, as described in READ Operation. The open page
from which the READ was terminated remains open.
AUTO REFRESH is used during normal operation of the device and is analogous to
CAS#-BEFORE-RAS# (CBR) REFRESH in FPM/EDO DRAM. The AUTO REFRESH com-
mand is nonpersistent and must be issued each time a refresh is required.
Addressing is generated by the internal refresh controller. This makes the address bits a
“Don’t Care” during an AUTO REFRESH command.
For improved efficiency in scheduling and switching between tasks, some flexibility in
the absolute refresh interval is provided. The auto refresh period begins when the AUTO
REFRESH command is registered and ends
Address
1. If A10 is HIGH, bank address becomes “Don’t Care.”
RAS#
CAS#
WE#
CK#
CKE
A10
CS#
CK
HIGH
Single bank
All banks
Bank
Don’t Care
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256Mb: x16, x32 Mobile LPDDR SDRAM
Micron Technology, Inc. reserves the right to change products or specifications without notice.
t
RFC later.
© 2008 Micron Technology, Inc. All rights reserved.
Commands