MT46H8M32LFB5-6IT:H Micron Technology Inc, MT46H8M32LFB5-6IT:H Datasheet - Page 26

• Manufacturer Part Number: MT46H8M32LFB5-6IT:H
• Description: MICMT46H8M32LFB5-6_IT:H MDDDR
• Manufacturer: Micron Technology Inc

Table 9: Electrical Characteristics and Recommended AC Operating Conditions (Continued)
Notes 1–9 apply to all parameters in this table; V
PDF: 09005aef834bf85b
256mb_mobile_ddr_sdram_t36n.pdf - Rev. I 09/10 EN
Parameter
PRECHARGE command
period
DQS read preamble CL = 3
DQS read preamble CL = 2
DQS read postamble
Active bank a to active bank
b command
Read of SRR to next valid
command
SRR to read
DQS write preamble
DQS write preamble setup
time
DQS write postamble
Write recovery time
Internal WRITE-to-READ
command delay
Exit power-down mode to
first valid command
Exit self refresh to first valid
command
Notes:
Symbol
t
1. All voltages referenced to V
2. All parameters assume proper device initialization.
3. Tests for AC timing and electrical AC and DC characteristics may be conducted at nomi-
4. The circuit shown below represents the timing reference load used in defining the rele-
t
WPRES
t
t
t
t
WPRE
t
WPST
t
RPRE
RPRE
t
t
t
RPST
t
WTR
RRD
t
t
SRC
SRR
XSR
WR
RP
XP
nal supply voltage levels, but the related specifications and device operation are guar-
anteed for the full voltage ranges specified.
vant timing parameters of the device. It is not intended to be either a precise represen-
tation of the typical system environment or a depiction of the actual load presented by
a production tester. System designers will use IBIS or other simulation tools to correlate
the timing reference load to system environment. Specifications are correlated to pro-
duction test conditions (generally a coaxial transmission line terminated at the tester
electronics). For the half-strength driver with a nominal 10pF load, parameters
t
production test but are estimated by design/characterization. Use of IBIS or other simu-
lation tools for system design validation is suggested.
QH are expected to be in the same range. However, these parameters are not subject to
I/O
Full drive strength
CL + 1
Min
0.25
0.9
0.5
0.4
0.4
15
10
15
80
2
0
1
1
50
-5
Electrical Specifications – AC Operating Conditions
DD
Max
/V
1.1
1.1
0.6
0.6
–
–
–
–
–
–
–
–
–
–
DDQ
20pF
= 1.70–1.95V
CL + 1
Min
16.2
10.8
0.25
0.9
0.5
0.4
0.4
15
80
26
2
0
1
1
SS
-54
.
I/O
256Mb: x16, x32 Mobile LPDDR SDRAM
Max
1.1
1.1
0.6
0.6
Half drive strength
–
–
–
–
–
–
–
–
–
–
Micron Technology, Inc. reserves the right to change products or specifications without notice.
50
CL + 1
Min
0.25
0.9
0.5
0.4
0.4
18
12
15
80
2
0
1
1
-6
Max
1.1
1.1
0.6
0.6
10pF
–
–
–
–
–
–
–
–
–
–
CL + 1
Min
22.5
0.25
0.9
0.5
0.4
0.4
15
15
80
2
0
1
1
© 2008 Micron Technology, Inc. All rights reserved.
-75
Max
1.1
1.1
0.6
0.6
–
–
–
–
–
–
–
–
–
–
Unit
t
t
t
t
t
t
t
t
t
ns
ns
ns
ns
ns
CK
CK
CK
CK
CK
CK
CK
CK
CK
t
AC and
Notes
25, 26
27
28
29