MT46H8M32LFB5-6IT:H Micron Technology Inc, MT46H8M32LFB5-6IT:H Datasheet - Page 37

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MT46H8M32LFB5-6IT:H

Manufacturer Part Number
MT46H8M32LFB5-6IT:H
Description
MICMT46H8M32LFB5-6_IT:H MDDDR
Manufacturer
Micron Technology Inc
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Figure 11: WRITE Command
PRECHARGE
PDF: 09005aef834bf85b
256mb_mobile_ddr_sdram_t36n.pdf - Rev. I 09/10 EN
Note:
BA0, BA1
The PRECHARGE command is used to deactivate the open row in a particular bank or
the open row in all banks. The bank(s) will be available for a subsequent row access a
specified time (
whether one or all banks will be precharged, and in the case where only one bank is pre-
charged, inputs BA0 and BA1 select the bank. Otherwise, BA0 and BA1 are treated as
“Don’t Care.” After a bank has been precharged, it is in the idle state and must be acti-
vated prior to any READ or WRITE commands being issued to that bank.
Address
1. EN AP = enable auto precharge; DIS AP = disable auto precharge.
RAS#
CAS#
WE#
CK#
CKE
A10
CS#
CK
HIGH
t
RP) after the PRECHARGE command is issued. Input A10 determines
Column
DIS AP
EN AP
Bank
Don’t Care
37
256Mb: x16, x32 Mobile LPDDR SDRAM
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2008 Micron Technology, Inc. All rights reserved.
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