MT47H32M16HR-3:FTR Micron Technology Inc, MT47H32M16HR-3:FTR Datasheet - Page 53
![](/photos/31/34/313419/mfg557-84-fbga_sml.jpg)
MT47H32M16HR-3:FTR
Manufacturer Part Number
MT47H32M16HR-3:FTR
Description
Manufacturer
Micron Technology Inc
Type
DDR2 SDRAMr
Datasheet
1.MT47H32M16HR-3FTR.pdf
(131 pages)
Specifications of MT47H32M16HR-3:FTR
Organization
32Mx16
Density
512Mb
Address Bus
15b
Access Time (max)
450ps
Maximum Clock Rate
667MHz
Operating Supply Voltage (typ)
1.8V
Package Type
FBGA
Operating Temp Range
0C to 85C
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Supply Current
250mA
Pin Count
84
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MT47H32M16HR-3:FTR
Manufacturer:
MICRON/镁光
Quantity:
20 000
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AC Overshoot/Undershoot Specification
Table 26: Address and Control Balls
Applies to address balls, bank address balls, CS#, RAS#, CAS#, WE#, CKE, and ODT
Table 27: Clock, Data, Strobe, and Mask Balls
Applies to DQ, DQS, DQS#, RDQS, RDQS#, UDQS, UDQS#, LDQS, LDQS#, DM, UDM, and LDM
Figure 20: Overshoot
Figure 21: Undershoot
PDF: 09005aef82f1e6e2
512MbDDR2.pdf - Rev. Q 10/10 EN
Parameter
Maximum peak amplitude allowed for overshoot area
(see Figure 20)
Maximum peak amplitude allowed for undershoot area
(see Figure 21)
Maximum overshoot area above V
Maximum undershoot area below V
Parameter
Maximum peak amplitude allowed for overshoot area
(see Figure 20)
Maximum peak amplitude allowed for undershoot area
(see Figure 21)
Maximum overshoot area above V
Maximum undershoot area below V
Some revisions will support the 0.9V maximum average amplitude instead of the 0.5V
maximum average amplitude shown in Table 26 and Table 27.
V
V
DD
V
SS
SS
/V
/V
/V
DDQ
SSQ
DD
DDQ
SSQ
SS
SSQ
(see Figure 20)
(see Figure 21)
(see Figure 20)
(see Figure 21)
Maximum amplitude
Maximum amplitude
53
Time (ns)
Time (ns)
AC Overshoot/Undershoot Specification
0.19 Vns
0.19 Vns
0.5 Vns
0.5 Vns
-187E
0.50V
0.50V
-187E
0.50V
0.50V
Micron Technology, Inc. reserves the right to change products or specifications without notice.
512Mb: x4, x8, x16 DDR2 SDRAM
Undershoot area
Overshoot area
-25/-25E
0.66 Vns
0.66 Vns
-25/-25E
0.23 Vns
0.23 Vns
0.50V
0.50V
0.50V
0.50V
Specification
Specification
0.80 Vns
0.80 Vns
0.23 Vns
0.23 Vns
-3/-3E
-3/-3E
0.50V
0.50V
0.50V
0.50V
© 2004 Micron Technology, Inc. All rights reserved.
1.00 Vns
1.00 Vns
0.28 Vns
0.28 Vns
0.50V
0.50V
0.50V
0.50V
-37E
-37E
1.33 Vns
1.33 Vns
0.38 Vns
0.38 Vns
0.50V
0.50V
0.50V
0.50V
-5E
-5E
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