MT47H32M16HR-3:FTR Micron Technology Inc, MT47H32M16HR-3:FTR Datasheet - Page 125
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MT47H32M16HR-3:FTR
Manufacturer Part Number
MT47H32M16HR-3:FTR
Description
Manufacturer
Micron Technology Inc
Type
DDR2 SDRAMr
Datasheet
1.MT47H32M16HR-3FTR.pdf
(131 pages)
Specifications of MT47H32M16HR-3:FTR
Organization
32Mx16
Density
512Mb
Address Bus
15b
Access Time (max)
450ps
Maximum Clock Rate
667MHz
Operating Supply Voltage (typ)
1.8V
Package Type
FBGA
Operating Temp Range
0C to 85C
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Supply Current
250mA
Pin Count
84
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MT47H32M16HR-3:FTR
Manufacturer:
MICRON/镁光
Quantity:
20 000
ODT Timing
PDF: 09005aef82f1e6e2
512MbDDR2.pdf - Rev. Q 10/10 EN
Once a 12ns delay (
bled via the EMR LOAD MODE command, ODT can be accessed under two timing
categories. ODT will operate either in synchronous mode or asynchronous mode, de-
pending on the state of CKE. ODT can switch anytime except during self refresh mode
and a few clocks after being enabled via EMR, as shown in Figure 79 (page 126).
There are two timing categories for ODT—turn-on and turn-off. During active mode
(CKE HIGH) and fast-exit power-down mode (any row of any bank open, CKE LOW,
MR[12 = 0]),
in Figure 81 (page 127).
During slow-exit power-down mode (any row of any bank open, CKE LOW, MR[12] = 1)
and precharge power-down mode (all banks/rows precharged and idle, CKE LOW),
t
ODT turn-off timing, prior to entering any power-down mode, is determined by the pa-
rameter
signal satisfies
(MIN) is satisfied,
shows the example where
occur until state T3. When
ODT turn-on timing prior to entering any power-down mode is determined by the pa-
rameter
satisfies
satisfied,
the example where
until state T3. When
ODT turn-off timing after exiting any power-down mode is determined by the parame-
ter
satisfies
satisfied,
the example where
When
ODT turn-on timing after exiting either slow-exit power-down mode or precharge power-
down mode is determined by the parameter
(page 131). At state Ta1, the ODT HIGH signal satisfies
down mode at state T1. When
parameters apply. Figure 86 (page 131) also shows the example where
not satisfied because ODT HIGH occurs at state Ta0. When
t
AONPD and
AONPD timing parameters apply.
t
AXPD (MIN), as shown in Figure 85 (page 130). At state Ta1, the ODT LOW signal
t
AXPD (MIN) is not satisfied,
t
t
t
t
ANPD (MIN), as shown in Figure 83 (page 128). At state T2, the ODT HIGH
ANPD, as shown in Figure 84 (page 129). At state T2, the ODT HIGH signal
ANPD (MIN) prior to entering power-down mode at T5. When
AXPD (MIN) after exiting power-down mode at state T1. When
t
t
AOND and
AOFD and
t
AOND,
t
AOFPD timing parameters are applied, as shown in Figure 82 (page 128).
t
ANPD (MIN) prior to entering power-down mode at T5. When
t
AOFD and
t
t
t
MOD) has been satisfied, and after the ODT function has been ena-
ANPD (MIN) is not satisfied because ODT HIGH does not occur
AXPD (MIN) is not satisfied because ODT LOW occurs at state Ta0.
t
t
t
ANPD (MIN) is not satisfied,
AON,
t
AOF timing parameters apply. Figure 85 (page 130) also shows
AON timing parameters apply. Figure 84 (page 129) also shows
t
t
ANPD (MIN) is not satisfied,
ANPD (MIN) is not satisfied because ODT HIGH does not
t
AOFD, and
125
t
AOF timing parameters apply. Figure 83 (page 128) also
t
AXPD (MIN) is satisfied,
t
AOFPD timing parameters apply.
Micron Technology, Inc. reserves the right to change products or specifications without notice.
t
AOF timing parameters are applied, as shown
512Mb: x4, x8, x16 DDR2 SDRAM
t
AXPD (MIN), as shown in Figure 86
t
AONPD timing parameters apply.
t
t
AOFPD timing parameters apply.
AXPD (MIN) after exiting power-
t
AOND and
t
AXPD (MIN) is not satisfied,
© 2004 Micron Technology, Inc. All rights reserved.
t
AON timing
t
AXPD (MIN) is
t
ODT Timing
t
ANPD (MIN) is
AXPD (MIN) is
t
ANPD