ANXL1500FGC3M AMD (ADVANCED MICRO DEVICES), ANXL1500FGC3M Datasheet - Page 59

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ANXL1500FGC3M

Manufacturer Part Number
ANXL1500FGC3M
Description
Manufacturer
AMD (ADVANCED MICRO DEVICES)
Datasheet

Specifications of ANXL1500FGC3M

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Electrical Specifications
5.9
The AMD Geode™ NX processor provides a diode that
can be used in conjunction with an external temperature
sensor to determine the die temperature of the processor.
The diode anode (THERMDA) and cathode (THERMDC)
are available as pins on the processor. Refer to Section
2.3.8 "Thermal Diode Interface Signals" on page 28 for
more details.
5.9.1
Table 5-16 shows the processor electrical characteristics of
the on-die thermal diode.
5.9.2
The following section describes parameters relating to
thermal protection. The implementation of thermal control
circuitry to control processor temperature is left to the man-
ufacturer to determine how to implement.
Thermal limits in circuit board design are necessary to pro-
tect the processor from thermal damage. T
temperature for thermal protection circuitry to initiate shut-
down of the processor. T
Note 1. The sourcing current should always be used in forward bias only.
Note 2. Characterized at 95°C with a forward bias current pair of 10 μA and 100 μA. AMD recommends using a minimum
Note 3. Not 100% tested. Specified by design and limited characterization.
Note 4. The lumped ideality factor adds the effect of the series resistance term to the actual ideality factor. The series re-
Note 1. The thermal diode is not 100% tested, it is specified by design and limited characterization.
Note 2. The thermal diode is capable of responding to thermal events of 40°C/s or faster.
Note 3. The Geode NX processor provides a thermal diode for measuring die temperature of the processor. The processor
AMD Geode™ NX Processors Data Book
Symbol
n
R
Symbol
T
I
T
n
f, actual
SD_DELAY
T
f, lumped
SHUTDOWN
of two sourcing currents to accurately measure the temperature of the thermal diode.
sistance term indicates the resistance from the pins of the processor to the on-die thermal diode. The value of the
lumped ideality factor depends on the sourcing current pair used.
relies on thermal circuitry on the circuit board to turn off the regulated core voltage to the processor in response to
a thermal shutdown event. Refer to AMD Athlon™ Processor-Based Motherboard Design Guide (publication ID
24363) for thermal protection circuitry designs.
Thermal Diode Characteristics
Thermal Diode Electrical Characteristics
Thermal Protection Characterization
Table 5-17. Guidelines for Platform Thermal Protection of the Processor
Parameter
Sourcing current (Note 1)
Lumped ideality factor (Note 2) (Note 3) (Note 4)
Actual ideality factor (Note 3) (Note 4)
Series Resistance (Note 3) (Note 4)
Parameter (Note 1) (Note 2) (Note 3)
Thermal diode shutdown temperature for processor protection
Maximum allowed time from T
SD_DELAY
Table 5-16. Thermal Diode Electrical Characteristics
is the maximum time
SHUTDOWN
SHUTDOWN
is the
detection to processor shutdown
allowed from the detection of the over-temperature condi-
tion to processor shutdown to prevent thermal damage to
the processor.
Systems that do not implement thermal protection circuitry
or that do not react within the time specified by T
can cause thermal damage to the processor during a fan
failure or if the processor is powered up without a heat-
sink. The processor relies on thermal circuitry on the circuit
board to turn off the regulated core voltage to the proces-
sor in response to a thermal shutdown event.
Thermal protection circuitry reference designs and thermal
solution guidelines are found in the following documents:
• AMD Athlon™ Processor-Based Motherboard Design
• AMD Thermal, Mechanical, and Chassis Cooling Design
Table 5-17 shows the T
cations necessary for circuitry in circuit board design for
thermal protection of the processor.
Guide (publication ID 24363)
Guide (publication ID 23794)
1.00000
Min
5
1.00374
1.00261
Nom
0.93
SHUTDOWN
31177H
1.00900
and T
Max
Max
125
500
300
SD_DELAY
Units
Units
ohms
SD_DELAY
ms
µA
°C
specifi-
59

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