PIC16LF1847-E/MV Microchip Technology, PIC16LF1847-E/MV Datasheet - Page 357
![14 KB Flash, 1K Bytes RAM, 32 MHz Int. Osc, 16 I/0, Enhanced Mid Range Core, Nan](/photos/16/12/161255/qfn28_sml.jpg)
PIC16LF1847-E/MV
Manufacturer Part Number
PIC16LF1847-E/MV
Description
14 KB Flash, 1K Bytes RAM, 32 MHz Int. Osc, 16 I/0, Enhanced Mid Range Core, Nan
Manufacturer
Microchip Technology
Series
PIC® XLP™ mTouch™ 16Fr
Datasheet
1.PIC16F1847-EP.pdf
(408 pages)
Specifications of PIC16LF1847-E/MV
Processor Series
PIC16LF
Core
RISC
Data Bus Width
10 bit
Program Memory Type
Flash
Program Memory Size
8 KB
Data Ram Size
1024 B
Interface Type
SPI, I2C
Maximum Clock Frequency
32 KHZ
Number Of Programmable I/os
15
Number Of Timers
3
Operating Supply Voltage
3.6 V
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Package / Case
UQFN-28
Operating Temperature Range
- 40 C to + 125 C
Processor To Be Evaluated
PIC16F1847
Supply Current (max)
34 uA
Core Processor
PIC
Core Size
8-Bit
Speed
32MHz
Connectivity
I²C, LIN, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
15
Eeprom Size
256 x 8
Ram Size
1K x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 3.6 V
Data Converters
A/D 12x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 125°C
Lead Free Status / Rohs Status
Details
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30.5
2011 Microchip Technology Inc.
DC CHARACTERISTICS
D110
D112
D113
D114
D115
D116
D117
D118
D119
D120
D121
D122
D123
D124
Note 1:
Param
No.
2:
3:
4:
†
Memory Programming Requirements
V
V
I
I
E
V
T
T
T
E
V
T
T
PPPGM
DDPGM
Sym.
DEW
RETD
REF
IW
RETD
IHH
PEW
D
DRW
P
PR
Data in “Typ” column is at 3.0V, 25°C unless otherwise stated. These parameters are for design guidance only and are
not tested.
Self-write and Block Erase.
Refer to
Required only if single-supply programming is disabled.
The MPLAB ICD 2 does not support variable V
between the MPLAB ICD 2 and target system when programming or debugging with the MPLAB ICD 2.
Program Memory Programming
Specifications
Voltage on MCLR/V
V
V
Current on MCLR/V
Write
Current on V
Data EEPROM Memory
Byte Endurance
V
Erase/Write Cycle Time
Characteristic Retention
Number of Total Erase/Write Cycles
before Refresh
Program Flash Memory
Cell Endurance
V
Self-timed Write Cycle Time
Characteristic Retention
DD
DD
DD
DD
Section 11.2 “Using the Data EEPROM”
for Bulk Erase
for Write or Row Erase
for Read/Write
for Read
Characteristic
DD
(2)
during Erase/Write
PP
PP
/RA5 pin
during Erase/
Preliminary
Standard Operating Conditions (unless otherwise stated)
Operating temperature
PP
100K
Min.
min.
min.
min.
output. Circuitry to limit the MPLAB ICD 2 V
V
V
10K
V
8.0
2.7
1M
20
40
—
—
—
—
DD
DD
DD
for a more detailed discussion on data EEPROM endurance.
Typ†
10M
4.0
—
—
—
—
—
—
—
—
—
—
2
Max.
-40°C T
max.
max.
max.
max.
V
V
V
V
9.0
1.0
5.0
5.0
2.5
—
—
—
—
—
DD
DD
DD
DD
PIC16(L)F1847
Units
A
Year
E/W
Year
E/W
E/W
mA
mA
ms
ms
+125°C
V
V
V
V
V
(Note 3, Note 4)
-40C to +85C
Provided no other
specifications are violated
-40°C to +85°C
-40C to +85C (Note 1)
Provided no other
specifications are violated
PP
voltage must be placed
Conditions
DS41453B-page 359
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