EV2A16AVNYU35 E2V, EV2A16AVNYU35 Datasheet - Page 6

• Manufacturer Part Number: EV2A16AVNYU35
• Manufacturer: E2V

Specifications of EV2A16AVNYU35

• Lead Free Status / RoHS Status: Supplier Unconfirmed

2.3
6
Direct Current (DC)
0918B–HIREL–06/09
Table 2-3.
Table 2-4.
Note:
Table 2-5.
Note:
Table 2-6.
Parameter
Input leakage current
Output leakage current
Output low voltage
(I
(I
Output high voltage
(I
(I
Parameter
ac active supply current — read modes
(I
ac active supply current — write modes
(V
EV2A16AVYS35
ac standby current
(V
(no other restrictions on other inputs)
CMOS standby current
(E ≥ V
(V
Parameter
Address input capacitance
Control input capacitance
Input/output capacitance
Parameter
Logic input timing measurement reference level
Logic output timing measurement reference level
Logic input pulse levels
Input rise/fall time
Output load for low and high impedance parameters
Output load for all other timing parameters
OL
OL
OH
OH
Out
DD
DD
DD
= +4 mA)
= +100 µA)
= –4 mA)
= –100 µA)
= 0 mA, V
= max, E = V
= max, f = 0 MHz)
= max)
DD
1. All active current measurements are measured with one address transition per cycle.
1. f = 1.0 MHz, dV = 3.0V, T
– 0.2V and V
DD
DC Characteristics
Power Supply Characteristics
Capacitance
AC Measurement Conditions
= max)
IH
)
In
≤ V
SS
+ 0.2V or ≥ V
(1)
(1)
(1)
A
Symbol
DD
= 25°C, periodically sampled rather than 100% tested.
I
I
lkg(O)
V
V
lkg(I)
OH
OL
– 0.2V)
V
DD
Min
2.4
–
–
–
– 0.2
Value
1.5V
1.5V
0 or 3.0V
2 ns
See
See
Symbol
Symbol
I
I
I
I
DDW
C
DDR
SB1
SB2
C
C
Figure
Figure
I/O
In
In
2-1A
2-1B
Typ
–
–
–
–
Typ
105
Typ
55
18
9
–
–
–
V
SS
e2v semiconductors SAS 2009
Max
0.4
±1
±1
–
+ 0.2
Max
Max
165
80
28
12
6
6
8
EV2A16A
Unit
µA
µA
Unit
Unit
V
V
mA
mA
mA
mA
pF
pF
pF