EV2A16AVNYU35 E2V, EV2A16AVNYU35 Datasheet

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EV2A16AVNYU35

Manufacturer Part Number
EV2A16AVNYU35
Description
Manufacturer
E2V
Datasheet

Specifications of EV2A16AVNYU35

Lead Free Status / RoHS Status
Supplier Unconfirmed
Datasheet
Features
Introduction
The EV2A16A is a 4,194,304-bit magnetoresistive random access memory (MRAM) device organized as 262,144 words
of 16 bits. The EV2A16A is equipped with chip enable (E), write enable (W), and output enable (G) pins, allowing for signif-
icant system design flexibility without bus contention. Because the EV2A16A has separate byte-enable controls (LB and
UB), individual bytes can be written and read.
MRAM is a nonvolatile memory technology that protects data in the event of power loss and does not require periodic
refreshing. The EV2A16A is the ideal memory solution for applications that must permanently store and retrieve critical
data quickly.
The EV2A16A is available in a 400-mil, 44-lead plastic small-outline TSOP type-II package RoHS compliant (MSL3 accord-
ing to Jedec standard) with an industry-standard center power and ground SRAM pinout.
The EV2A16A is available in Industrial (–40°C to 110°C) and Military (–55°C to +125°C) temperature ranges.
e2v semiconductors SAS 2009
Single 3.3V Power Supply
Industrial Temperature Range (–40°C to 110°C) and
Military Temperature Range (–55°C to 125°C)
Symmetrical High-speed Read and Write with Fast Access Time (35 ns)
Flexible Data Bus Control: 8 bit or 16 bit Access
Equal Address and Chip-enable Access Times
Automatic Data Protection with Low-voltage Inhibit Circuitry to Prevent Writes on Power Loss
All Inputs and Outputs are Transistor-transistor Logic (TTL) Compatible
Fully Static Operation
Full Nonvolatile Operation with 20 Years Minimum Data Retention
256K x 16-bit 3.3V Asynchronous
Magnetoresistive RAM
for the latest version of the datasheet
Visit our website: www.e2v.com
EV2A16A
0918B–HIREL–06/09

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EV2A16AVNYU35 Summary of contents

Page 1

... Jedec standard) with an industry-standard center power and ground SRAM pinout. The EV2A16A is available in Industrial (–40°C to 110°C) and Military (–55°C to +125°C) temperature ranges. e2v semiconductors SAS 2009 256K x 16-bit 3.3V Asynchronous Magnetoresistive RAM Visit our website: www.e2v.com for the latest version of the datasheet EV2A16A 0918B–HIREL–06/09 ...

Page 2

... Output 8 Buffer Sense AMPS 8 Lower Byte 8 Output Buffer Upper 8 Byte DQU[15:8] 8 Write Final Driver Write Drivers 8 Lower 8 Byte DQL[7:0] Write Driver 44 A17 43 A16 42 A15 DQU15 37 DQU14 36 DQU13 35 DQU12 DQU11 31 DQU10 30 DQU9 29 DQU8 A14 26 A13 25 A12 24 A11 23 A10 e2v semiconductors SAS 2009 ...

Page 3

... DQL[7:0] DQU[15: Table 1-2. Operating Modes (1) ( Notes high low don’t care 2. Hi-Z = high impedance e2v semiconductors SAS 2009 (1) (1) ( Mode Not selected Output disabled Output disabled Lower byte read Upper byte read Word read Lower byte write Upper byte write ...

Page 4

... Power dissipation capability depends on package characteristics and use environment. 4 0918B–HIREL–06/09 (1) (2) ( Symbol Value V –0 –0 0 ±20 Out P 0.600 D T –55 to 125 Bias T –55 to 150 stg T 260 Lead H 2000 max_write H 8000 max_read e2v semiconductors SAS 2009 EV2A16A Unit °C °C °C A/m A/m ...

Page 5

... Any logic that drives /E and /W should hold the signals high with a power-on reset signal for longer that the startup time. During power loss or brownout where V tected and a startup time must be observed when power returns above V Startup Time V WI Writes Inhibited /E /W e2v semiconductors SAS 2009 Symbol Min ( ...

Page 6

... SS – – 2.4 – 0.2 DD Symbol Typ Max DDR I 105 165 DDW SB1 SB2 Symbol Typ Max C – – – 8 I/O Value 1. See Figure 2-1A See Figure 2-1B e2v semiconductors SAS 2009 EV2A16A Unit µA µ Unit Unit ...

Page 7

... Addresses valid before or at the same time E goes low. 4. This parameter is sampled and not 100% tested. 5. Transition is measured ±200 mV from steady-state voltage. Figure 2-2. Read Cycle 1 A (Address) Q (Data Out) 1. Device is continuously selected (E ≤ V Note: e2v semiconductors SAS 2009 Z = 50Ω D Output R = 50Ω ...

Page 8

... WLEH t WLWH 15 t WLEH t 10 DVWH t 0 WHDX t 0 WLQZ t 3 WHQX t 12 WHAX max < t min. WLQZ WHQX EV2A16A t EHQZ t GHQZ t BHQZ Data Valid Max Unit – ns – ns – ns – ns – ns – ns – ns – – ns – ns e2v semiconductors SAS 2009 ...

Page 9

... All write cycle timings are referenced from the last valid address to the first transition address goes low at the same time or after W goes low, the output will remain in a high-impedance state goes high at the same time or before W goes high, the output will remain in a high-impedance state. e2v semiconductors SAS 2009 t AVAV ...

Page 10

... AVEL Hi-Z Symbol ( ELEH t ELWH t DVEH Data Valid (1)(2)(3)(4)(5)(6) Min Max – 35 AVAV – 0 AVBL – 18 AVBH – 20 AVBH BLEH – 15 BLWH BLEH – 15 BLWH – 10 DVBH – 0 BHDX – 12 BHAX e2v semiconductors SAS 2009 EV2A16A t EHAX t EHDX Unit ...

Page 11

... Figure 2-6. Write Cycle 3 (LB/UB Controlled) A (Address) E (Chip Enable) LB, UB (Byte Enable) W (Write Enable) D (Data In) Q (Data Out) e2v semiconductors SAS 2009 t AVAV t AVBH t AVBL Hi-Z t BHAX t BLEH t BLWH t BHDX t DVBH Data Valid Hi-Z 0918B–HIREL–06/09 EV2A16A 11 ...

Page 12

... Mechanical Drawing The following pages detail the package available to EV2A16A 0918B–HIREL–06/ LEAD TSOP, TYPE II, .400 WIDE EV2A16A View D Seating Plane e2v semiconductors SAS 2009 ...

Page 13

... Dimensions in millimeters. 3. Dimensions do not include mold protrusion. Allowable mold protrusion is 0.15 per side. 4. Dimension does not include DAM bar protrusions. DAM bar protrusion shall not cause the lead width to exceed 0.58. e2v semiconductors SAS 2009 0.05 0.15 View D Rotated 90˚ CW 0.30 ...

Page 14

... Density Memory Code Type e2v Prefix async Notes: 1. For availability of the different versions, contact your local e2v sales office. 2. Lead finishing: pure tin (Sn 99,99%) 5. Document Revision History Table 5-1 provides a revision history for this hardware specification. Table 5-1. Document Revision History Rev ...

Page 15

... Whilst e2v has taken care to ensure the accuracy of the information contained herein it accepts no responsibility for the consequences of any use thereof and also reserves the right to change the specification of goods without notice. e2v accepts no liability beyond that set out in its standard conditions of sale in respect of infringement of third party patents arising from the use of tubes or other devices in accordance with information contained herein ...

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