EV2A08AVNYU35 E2V, EV2A08AVNYU35 Datasheet
EV2A08AVNYU35
Specifications of EV2A08AVNYU35
Related parts for EV2A08AVNYU35
EV2A08AVNYU35 Summary of contents
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... Jedec standard) with an industry-standard center power and ground SRAM pinout. The EV2A08A is available in Industrial (–40°C to 110°C) and Military (–55°C to +125°C) temperature ranges. e2v semiconductors SAS 2010 512K x 8-bit 3.3V Asynchronous Magnetoresistive RAM Visit our website: www.e2v.com for the latest version of the datasheet EV2A08A 1024B–HIREL–10/10 ...
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... Array Final 8 Write Drivers Write Enable Function Address Input Chip Enable Write Enable Output Enable Data I/O Power Supply Ground Do Not Connect No Connection – Pin 2, 43 (TSOPII); Reserved For Future Expansion 8 8 Output Buffer 8 Write 8 DQ[7:0] Driver e2v semiconductors SAS 2010 ...
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... Figure 1-2. Pin Diagrams for Available Packages (Top View) Table 1-2. Operating Modes ( Notes high low don’t care 2. Hi-Z = high impedance e2v semiconductors SAS 2010 Pin TSOP II (1) ( Not selected H H Output disabled L H Byte Read X L Byte Write EV2A08A ...
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... H 8000 max_read Typical Max Unit 3.3 3.6 V (1) 2.7 3.0 V (2) – 0 – 0.8 V 110 °C 125 ,(min). See Power Up and Power Down Sequencing (pulse width = 10 ns) for I = 20.0 mA. e2v semiconductors SAS 2010 Unit °C °C °C A/m A/m ...
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... Writes Inhibited Table 2-3. DC Characteristics Parameter Input leakage current Output leakage current Output low voltage ( mA +100 µA) OL Output high voltage (I = –4 mA –100 µA) OL e2v semiconductors SAS 2010 on power goes below V DD (min). DD Startup time Brownout or power loss E W Normal Operation Symbol I lkg(I) I ...
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... A Symbol Typical Max DDR I DDW 50 135 50 135 SB1 SB2 Symbol Typical Max C – – – 8 I/O Value Unit 1 See Figure 2-2 on page 7 See Figure 2-3 on page 7 e2v semiconductors SAS 2010 Unit Unit ...
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... W is high for read cycle. Power supplies must be properly grounded and decoupled, and bus contention conditions must be minimized or eliminated during read or write cycles. 2. Addresses valid before or at the same time E goes low. 3. This parameter is sampled and not 100% tested. Transition is measured ±200 mV from the steady-state voltage. e2v semiconductors SAS 2010 Z = 50Ω D Output Output 435Ω ...
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... Device is continuously selected (E ≤ V Note: Figure 2-5. Read Cycle 2 A (Address) E (Chip Enable) G (Output Enable) Q (Data Out) 8 1024B–HIREL–10/10 t AVAV t AXQX Previous Data Valid t AVQV , G ≤ AVAV t AVQV t ELQV t ELQX t GLQV t GLQX Data Valid t EHQZ t GHQZ Data Valid e2v semiconductors SAS 2010 ...
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... This parameter is sampled and not 100% tested. Transition is measured ±200 mV from the steady-state voltage. At any given voltage or temperature, t Figure 2-6. Write Cycle Timing 1 (W Controlled) A (Address) E (Chip Enable) W (Write Enable) D (Data In) Q (Data Out) e2v semiconductors SAS 2010 (2) (3) (3) t AVWL t WLQZ Hi-Z ...
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... AVAV t AVEL t AVEH t AVEH t ELEH t ELWH t ELEH (3) t ELWH t DVEH t EHDX t EHAX t AVAV t AVEH t AVEL Hi-Z (1) Min Max 35 – 0 – 18 – 20 – 15 – 15 – 10 – 0 – 12 – t ELEH t ELWH t t DVEH EHDX Data Valid e2v semiconductors SAS 2010 Unit EHAX ...
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... Print Version Not To Scale 1. Dimensions and tolerances per ASME Y14.5M - 1994. 2. Dimensions in Millimeters. 3. Dimensions do not include mold protrusion. 4. Dimension does not include DAM bar protrusions. DAM Bar protrusion shall not cause the lead width to exceed 0.58. e2v semiconductors SAS 2010 44 1 18.28 18. ...
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... Memory Code Type Configuration e2v Prefix async Notes: 1. For availability of the different versions, contact your local e2v sales office. 2. Lead finishing: pure tin (Sn 99,99%) 5. Document Revision History Table 5-1 provides a revision history for this hardware specification. Table 5-1. Document Revision History Rev ...
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... Whilst e2v has taken care to ensure the accuracy of the information contained herein it accepts no responsibility for the consequences of any use thereof and also reserves the right to change the specification of goods without notice. e2v accepts no liability beyond that set out in its standard conditions of sale in respect of infringement of third party patents arising from the use of tubes or other devices in accordance with information contained herein ...