EV2A16AVNYU35 E2V, EV2A16AVNYU35 Datasheet - Page 4

• Manufacturer Part Number: EV2A16AVNYU35
• Manufacturer: E2V

Specifications of EV2A16AVNYU35

• Lead Free Status / RoHS Status: Supplier Unconfirmed

2. Electrical Specifications
2.1
4
Absolute Maximum Ratings
0918B–HIREL–06/09
This device contains circuitry to protect the inputs against damage caused by high static voltages or
electric fields; however, it is advised that normal precautions be taken to avoid application of any voltage
greater than maximum rated voltages to these high-impedance (Hi-Z) circuits.
The device also contains protection against external magnetic fields. Precautions should be taken to
avoid application of any magnetic field more intense than the maximum field intensity specified in the
maximum ratings.
Table 2-1.
Notes:
Parameter
Supply voltage
Voltage on any pin
Output current per pin
Package power dissipation
Temperature under bias
Storage temperature
Lead temperature during solder (3 minute max)
Maximum magnetic field during write
Maximum magnetic field during read or standby
1. Permanent device damage may occur if absolute maximum ratings are exceeded. Functional operation
2. All voltages are referenced to V
3. Power dissipation capability depends on package characteristics and use environment.
should be restricted to recommended operating conditions. Exposure to excessive voltages or magnetic
fields could affect device reliability.
Absolute Maximum Ratings
(2)
(2)
(3)
SS
.
(1)
H
H
Symbol
max_write
max_read
T
T
V
T
I
V
P
Lead
Out
Bias
DD
stg
In
D
–0.5 to V
–0.5 to 4.0
–55 to 125
–55 to 150
Value
0.600
2000
8000
±20
260
DD
+ 0.5
e2v semiconductors SAS 2009
EV2A16A
Unit
A/m
A/m
mA
°C
°C
°C
W
V
V