M393T5750EZA-CE6 Samsung Semiconductor, M393T5750EZA-CE6 Datasheet - Page 16

• Manufacturer Part Number: M393T5750EZA-CE6
• Manufacturer: Samsung Semiconductor

Specifications of M393T5750EZA-CE6

• Lead Free Status / RoHS Status: Compliant

11.5 M393T2950EZ3 / M393T2950EZA : 1GB(128Mx4 *18) Module
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
11.6 M393T2950EZ3 / M393T2950EZA : 1GB(128Mx4 *18) Module
* IDD6 = DRAM current + standby current of PLL and Register
** Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
RDIMM
IDD3P-F
IDD3P-S
IDD3P-F
IDD3P-S
Symbol
Symbol
IDD4W
IDD4W
IDD2P
IDD2Q
IDD2N
IDD3N
IDD4R
IDD5B
IDD2P
IDD2Q
IDD2N
IDD3N
IDD4R
IDD5B
IDD6*
IDD6*
IDD0
IDD1
IDD7
IDD0
IDD1
IDD7
F7(800@CL=6)
F7(800@CL=6)
1,530
1,710
2,160
2,340
2,070
3,870
2,220
2,480
1,340
1,290
1,270
1,550
2,810
3,130
2,900
4,900
144
630
720
540
216
990
144
784
946
144
- considering Register and PLL current value
E6(667@CL=5)
E6(667@CL=5)
1,350
1,530
1,890
2,070
1,980
3,240
1,940
2,190
1,250
1,220
1,170
1,480
2,450
2,750
2,660
4,110
144
630
720
540
216
990
144
724
846
144
16 of 26
D5(533@CL=4)
D5(533@CL=4)
1,350
1,530
1,620
1,800
1,890
3,240
1,840
2,080
1,070
1,060
1,070
1,320
2,090
2,370
2,420
3,950
144
540
630
540
216
900
144
664
746
144
CC(400@CL=3)
CC(400@CL=3)
1,260
1,530
1,440
1,620
1,890
3,240
1,650
1,970
1,250
1,820
2,080
2,270
3,790
604
980
990
970
646
144
144
540
630
540
216
900
144
Rev. 1.4 August 2008
DDR2 SDRAM
(T
(T
A
A
Units
Units
=0
=0
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
o
o
C, V
C, V
DD
DD
Notes
Notes
= 1.9V)
= 1.9V)