M393T5750EZA-CE6 Samsung Semiconductor, M393T5750EZA-CE6 Datasheet - Page 12

• Manufacturer Part Number: M393T5750EZA-CE6
• Manufacturer: Samsung Semiconductor

Specifications of M393T5750EZA-CE6

• Lead Free Status / RoHS Status: Compliant

9.2 Operating Temperature Condition
Note :
1. Operating Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions, please refer to JESD51.2
2. At 85 - 95 °C operation temperature range, doubling refresh commands in frequency to a 32ms period ( tREFI=3.9 us ) is required, and to enter to self
9.3 Input DC Logic Level
9.4 Input AC Logic Level
9.5 AC Input Test Conditions
Note :
1. Input waveform timing is referenced to the input signal crossing through the V
2. The input signal minimum slew rate is to be maintained over the range from V
3. AC timings are referenced with input waveforms switching from V
RDIMM
standard.
refresh mode at this temperature range, an EMRS command is required to change internal refresh rate.
max for falling edges as shown in the below figure.
transitions.
V
SWING(MAX)
Symbol
V
Symbol
V
Symbol
V
V
SLEW
IH
V
Symbol
IL
IH
IL
T
(DC)
REF
(DC)
(AC)
OPER
(AC)
Input reference voltage
Input signal maximum peak to peak swing
Input signal minimum slew rate
AC input logic high
AC input logic low
Parameter
DC input logic high
DC input logic low
Parameter
Operating Temperature
V
Falling Slew =
SWING(MAX)
Parameter
Condition
delta TF
V
REF
V
REF
Min.
< AC Input Test Signal Waveform >
+ 0.250
DDR2-400, DDR2-533
-
- V
delta TF
IL
(AC) max
V
IL
REF
(AC) to V
12 of 26
Min.
- 0.3
+ 0.125
V
IH
REF
IH/IL
REF
(AC) on the positive transitions and V
Max.
delta TR
- 0.250
(AC) level applied to the device under test.
-
to V
Rating
0 to 95
Rising Slew =
IH
V
(AC) min for rising edges and the range from V
V
REF
0.5 * V
DDQ
Max.
Value
- 0.125
1.0
1.0
+ 0.3
V
DDQ
REF
V
Min.
IH
+ 0.200
DDR2-667, DDR2-800
(AC) min - V
V
V
V
V
V
V
V
delta TR
DDQ
IH
IH
REF
IL
IL
SS
(DC) max
(AC) max
(AC) min
(DC) min
Units
°C
Units
REF
Units
V/ns
V
V
IH
Rev. 1.4 August 2008
V
V
(AC) to V
V
DDR2 SDRAM
REF
Max.
- 0.200
IL
(AC) on the negative
Notes
1, 2
REF
Notes
Notes
2, 3
1
1
to V
Units
V
V
IL
(AC)