NAND08GW3B2CN6E NUMONYX, NAND08GW3B2CN6E Datasheet - Page 65

• Manufacturer Part Number: NAND08GW3B2CN6E
• Description: 8GBIT SLC NAND FLASH TSOP
• Manufacturer: NUMONYX

Specifications of NAND08GW3B2CN6E

• Cell Type: NAND
• Density: 8Gb
• Access Time (max): 25us
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 30b
• Operating Supply Voltage (typ): 3/3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Program/erase Volt (typ): 2.7 to 3.6V
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 1G
• Supply Current: 30mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / RoHS Status: Compliant

NAND04G-B2D, NAND08G-BxC
12.1
Ready/busy signal electrical characteristics
Figure
signal. The value required for the resistor R
This is an example for 3 V devices:
where I
max is determined by the maximum value of t
Figure 40. Ready/busy AC waveform
Figure 41. Ready/busy load circuit
41,
L
is the sum of the input currents of all the devices tied to the ready/busy signal. R
Figure 40
and
Figure 42
ready V DD
DEVICE
V SS
V DD
R P min
R P min
t f
show the electrical characteristics for the ready/busy
=
V OL
(
-------------------------------------------------------------
V DDmax V OLmax
=
P
-------------------------- -
8mA
I OL
busy
can be calculated using the following equation:
R P
r
3.2V
.
Open Drain Output
RB
–
+
+
I L
I L
t r
)
ibusy
V OH
AI07563B
NI3087B
DC and AC parameters
65/72
P