NAND08GW3B2CN6E NUMONYX, NAND08GW3B2CN6E Datasheet - Page 52

• Manufacturer Part Number: NAND08GW3B2CN6E
• Description: 8GBIT SLC NAND FLASH TSOP
• Manufacturer: NUMONYX

Specifications of NAND08GW3B2CN6E

• Cell Type: NAND
• Density: 8Gb
• Access Time (max): 25us
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 30b
• Operating Supply Voltage (typ): 3/3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Program/erase Volt (typ): 2.7 to 3.6V
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 1G
• Supply Current: 30mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / RoHS Status: Compliant

DC and AC parameters
Figure 23. Equivalent testing circuit for AC characteristics measurement
Table 28.
1. Standby and leakage currents refer to a single die device. For a multiple die device, their value must be multiplied for the
52/72
I
Symbol
OL
V
I
I
I
I
V
V
number of dice of the stacked device, while the active power consumption depends on the number of dice concurrently
executing different operations.
V
DD1
DD2
DD3
DD5
I
V
I
LKO
LO
OH
LI
OL
(RB)
IH
IL
DC characteristics (1.8 V devices)
V
DD
Operating
Standby current (CMOS)
Output high voltage level
Output low voltage level
Output low current (RB)
Output leakage current
current
Input leakage current
supply voltage (erase and
Input high voltage
Input low voltage
program lockout)
Parameter
Sequential
Program
NAND Flash
Erase
read
C L
V
E=V
V
OUT
Test conditions
t
IN
I
RLRL
I
GND
OH
(1)
E=V
= 0 to V
OL
V
WP=0/V
IL,
= 0 to V
OL
= -100 µA
I
= 100 µA
OUT
minimum
= 0.1 V
DD
–
–
–
–
–
-0.2,
DD
= 0 mA
DD
DD
max
max
V DD
GND
0.8 * V
V
2R ref
2R ref
DD
Min
-0.3
–
–
–
–
–
–
–
3
–
- 0.1
NAND04G-B2D, NAND08G-BxC
DD
Ai11085
Typ
10
10
10
10
–
–
–
–
–
–
–
–
V
0.2 * V
DD
Max
±10
±10
0.1
1.1
20
20
20
50
–
4
+ 0.3
DD
Unit
mA
mA
mA
mA
µA
µA
µA
V
V
V
V
V