NAND08GW3B2CN6E NUMONYX, NAND08GW3B2CN6E Datasheet - Page 56

• Manufacturer Part Number: NAND08GW3B2CN6E
• Description: 8GBIT SLC NAND FLASH TSOP
• Manufacturer: NUMONYX

Specifications of NAND08GW3B2CN6E

• Cell Type: NAND
• Density: 8Gb
• Access Time (max): 25us
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 30b
• Operating Supply Voltage (typ): 3/3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Program/erase Volt (typ): 2.7 to 3.6V
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 1G
• Supply Current: 30mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / RoHS Status: Compliant

DC and AC parameters
Figure 26. Data input latch AC waveforms
1. The last data input is the 2112th.
Figure 27. Sequential data output after read AC waveforms
1. CL = Low, AL = Low, W = High.
2. t
56/72
RHQX
is applicable for frequencies lower than 33 MHz (for instance, t
CL
AL
I/O
W
E
I/O
RB
R
E
(ALSetup time)
tALLWH
tBHRL
(R Accesstime)
tWLWH
tRLQV
(Data Setup time)
tDVWH
(R High Holdtime)
tRHRL
(Read Cycle time)
Data Out
tWLWL
Data In 0
tRLRL
tRLQV
(Data Hold time)
tDVWH
tWHDX
tWLWH
tRHQZ
Data Out
Data In 1
RLRL
tRLQV
tDVWH
higher than 30 ns).
tWHDX
Data In
NAND04G-B2D, NAND08G-BxC
Data Out
Last
tEHQX
tEHQZ
tWLWH
tWHDX
(E Hold time)
tRHQX (2)
tWHEH
tRHQZ
(CL Hold time)
tWHCLH
ai12472
ai13174