NAND08GW3B2CN6E NUMONYX, NAND08GW3B2CN6E Datasheet - Page 58
NAND08GW3B2CN6E
Manufacturer Part Number
NAND08GW3B2CN6E
Description
8GBIT SLC NAND FLASH TSOP
Manufacturer
NUMONYX
Datasheet
1.NAND08GW3B2CN6E.pdf
(72 pages)
Specifications of NAND08GW3B2CN6E
Cell Type
NAND
Density
8Gb
Access Time (max)
25us
Interface Type
Parallel
Boot Type
Not Required
Address Bus
30b
Operating Supply Voltage (typ)
3/3.3V
Operating Temp Range
-40C to 85C
Package Type
TSOP
Program/erase Volt (typ)
2.7 to 3.6V
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8b
Number Of Words
1G
Supply Current
30mA
Mounting
Surface Mount
Pin Count
48
Lead Free Status / RoHS Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NAND08GW3B2CN6E
Manufacturer:
CYPRESS
Quantity:
1 003
Part Number:
NAND08GW3B2CN6E
Manufacturer:
ST
Quantity:
20 000
DC and AC parameters
Figure 30. Read status enhanced waveform
Figure 31. Read electronic signature AC waveform
1. Refer to
58/72
I/O 0-7
information contained in byte 3, byte 4, and byte 5.
CL
W
R
AL
I/O
CL
AL
W
R
E
Table 16
for the values of the manufacturer and device codes, and to
78h
Read Electronic
90h
Command
Signature
Address 1
1st Cycle
Address
tALLRL1
00h
Address 2
(Read ES Access time)
tWHRL
tALLRL2
tRLQV
Address 3
Byte1
Man.
code
Device
code
Byte2
Table
Byte3
NAND04G-B2D, NAND08G-BxC
17,
see Note.1
Table
18, and
Byte4
Status Register
Table 19
output
Byte5
for the
ai14408b
ai13178