NAND08GW3B2CN6E NUMONYX, NAND08GW3B2CN6E Datasheet - Page 25

no-image

NAND08GW3B2CN6E

Manufacturer Part Number
NAND08GW3B2CN6E
Description
8GBIT SLC NAND FLASH TSOP
Manufacturer
NUMONYX
Datasheet

Specifications of NAND08GW3B2CN6E

Cell Type
NAND
Density
8Gb
Access Time (max)
25us
Interface Type
Parallel
Boot Type
Not Required
Address Bus
30b
Operating Supply Voltage (typ)
3/3.3V
Operating Temp Range
-40C to 85C
Package Type
TSOP
Program/erase Volt (typ)
2.7 to 3.6V
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8b
Number Of Words
1G
Supply Current
30mA
Mounting
Surface Mount
Pin Count
48
Lead Free Status / RoHS Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NAND08GW3B2CN6E
Manufacturer:
CYPRESS
Quantity:
1 003
Part Number:
NAND08GW3B2CN6E
Manufacturer:
ST
0
Part Number:
NAND08GW3B2CN6E
Manufacturer:
ST
Quantity:
20 000
Company:
Part Number:
NAND08GW3B2CN6E
Quantity:
200
NAND04G-B2D, NAND08G-BxC
Figure 9.
Figure 10. Cache read (random) operation
I/O0-7
RB
R
I/O0-7
RB
R
Read
Setup
Code
00h
Read
Setup
Code
After the Sequential Cache Read or Random Cache Read command has been issued, the
Ready/Busy signal goes Low and the status register bits are set to SR5 =' 0' and SR6 ='0'
for a period of cache read busy time, t
cache register.
After the cache read busy time has passed, the Ready/Busy signal goes High and the status
register bits are set to SR5 = '0' and SR6 = '1', signifying that the cache register is ready to
download new data. Data of the previously read page can be output from the page buffer by
toggling the Read Enable signal. Data output always begins at column address 00h, but the
Random Data Output command is also supported.
Cache read (sequential) operation
00h
Address
Inputs
Address
Inputs
(Read Busy time)
tBLBH1
(Read Busy time)
tBLBH1
Read
Code
30h
Read
Code
30h
Busy
Busy
(Read Cache Busy time)
Cache
Read
Sequential
Code
Repeat as many times as ncessary.
Read
Setup
Code
00h
31h
tRCBSY
Repeat as many times as ncessary.
Address
(Read Cache Busy time)
Inputs
RCBSY
tRCBSY
Enhanced
Cache
Read
(random)
Code
, while the device copies the next page into the
Outputs
31h
(Read Cache Busy time)
Data
tRCBSY
Outputs
Data
Exit
Cache
Read
Code
(Read Cache Busy time)
3Fh
tRCBSY
Exit
Cache
Read
Code
3Fh
Outputs
Device operations
Data
Outputs
Data
ai13176c
ai13176b
25/72

Related parts for NAND08GW3B2CN6E