PIC18F46K80T-I/ML Microchip Technology, PIC18F46K80T-I/ML Datasheet - Page 566
![ECAN, 64KB Flash, 4KB RAM, 16 MIPS, 12-bit ADC, CTMU 44 QFN 8x8x0.9mm T/R](/photos/39/70/397090/qfn-44_sml.jpg)
PIC18F46K80T-I/ML
Manufacturer Part Number
PIC18F46K80T-I/ML
Description
ECAN, 64KB Flash, 4KB RAM, 16 MIPS, 12-bit ADC, CTMU 44 QFN 8x8x0.9mm T/R
Manufacturer
Microchip Technology
Series
PIC® XLP™ 18Fr
Datasheet
1.PIC18F25K80-ISO.pdf
(628 pages)
Specifications of PIC18F46K80T-I/ML
Core Processor
PIC
Core Size
8-Bit
Speed
64MHz
Connectivity
ECAN, I²C, LIN, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, LVD, POR, PWM, WDT
Number Of I /o
35
Program Memory Size
64KB (32K x 16)
Program Memory Type
FLASH
Eeprom Size
1K x 8
Ram Size
3.6K x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 5.5 V
Data Converters
A/D 11x12b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
*
Processor Series
PIC18F46K80
Core
PIC
Data Bus Width
8 bit
Data Ram Size
1 KB
Interface Type
I2C, SPI, USART
Maximum Clock Frequency
64 MHz
Number Of Programmable I/os
35
Number Of Timers
5
Operating Supply Voltage
1.8 V to 5.5 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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PIC18F66K80 FAMILY
TABLE 31-1:
DS39977C-page 566
DC CHARACTERISTICS
D110
D113
D120
D121
D122
D123
D124
D130
D131
D132B V
D133A T
D134
D135
D140
Note 1:
Param
No.
2:
3:
4:
† Data in “Typ” column is at 3.3V, 25°C unless otherwise stated. These parameters are for design guidance
V
I
E
V
T
T
T
E
V
T
I
T
DDP
DDP
Sym
DEW
RETD
REF
IW
RETD
WE
PP
D
DRW
P
PR
PEW
only and are not tested.
These specifications are for programming the on-chip program memory through the use of table write
instructions.
Refer to
endurance.
Required only if Single-Supply Programming is disabled.
The MPLAB ICD2 does not support variable V
placed between the ICD2 and target system when programming or debugging with the ICD2.
Internal Program Memory
Programming Specifications
Voltage on MCLR/V
Supply Current during
Programming
Data EEPROM Memory
Byte Endurance
V
Erase/Write Cycle Time
Characteristic Retention
Number of Total Erase/Write
Cycles before Refresh
Program Flash Memory
Cell Endurance
V
Voltage for Self-Timed Erase or
Write Operations
V
Self-Timed Write Cycle Time
Characteristic Retention
Supply Current during
Programming
Writes per Erase Cycle
MEMORY PROGRAMMING REQUIREMENTS
DD
DD
DD
Section 8.8 “Using the Data EEPROM”
for Read/Write
for Read
Characteristic
PP
/RE5 pin
(2)
(1)
Preliminary
Standard Operating Conditions
Operating temperature -40°C T
V
DD
100K
Min
1.8
1.8
1M
1.8
1.8
1.8
1K
20
20
—
—
—
—
—
PP
+ 1.5
output. Circuitry to limit the ICD2 V
for a more detailed discussion on data EEPROM
1000K
Typ†
10M
10K
—
—
—
—
—
—
—
—
—
—
—
4
2
Max
-40°C T
5.5
3.6
5.5
3.6
5.5
10
10
—
—
10
—
—
—
—
—
1
Units
Year Provided no other
Year Provided no other
E/W -40C to +125C
E/W -40°C to +125°C
E/W -40 C to +125 C
mA
mA
ms
ms
A
A
V
V
V
V
V
V
+125°C for Extended
+85°C for Industrial
2011 Microchip Technology Inc.
(Note 3, Note 4)
(Note 2)
Using EECON to read/write
PIC18FXXKXX devices
Using EECON to read/write
PIC18LFXXKXX devices
specifications are violated
PIC18FXXKXX devices
PIC18LFXXKXX devices
PIC18FXXKXX devices
specifications are violated
For each physical address
PP
voltage must be
Conditions
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