PN200 Fairchild Semiconductor, PN200 Datasheet - Page 4

• Manufacturer Part Number: PN200
• Description: TRANSISTOR GP PNP 45V TO-92
• Manufacturer: Fairchild Semiconductor

Specifications of PN200

• Transistor Type: PNP
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 20mA, 200mA
• Current - Collector Cutoff (max): 50nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 1V
• Power - Max: 625mW
• Frequency - Transition: 250MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: - 6 V
• Continuous Collector Current: 0.5 A
• Maximum Dc Collector Current: 0.5 A
• Power Dissipation: 625 mW
• Maximum Operating Frequency: 250 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 100
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics
40
30
20
10
0
1
V
ce
= 5V
Gain Bandwidth Product
I - COLLECTOR CURRENT (mA)
vs Collector Current
C
10
20
700
600
500
400
300
200
100
0
0
(continued)
50
SOT-23
25
Ambient Temperature
100 150
Power Dissipation vs
TEMPER ATURE ( C)
50
TO-92
75
300
270
240
210
180
150
120
°
100
90
60
30
0
PNP General Purpose Amplifier
10
t d
125
I - COLLECTOR CURRENT (mA)
Switching Times vs
20
C
Collector Current
IB1 = IB2 = Ic / 10
150
V
cc
30
= 10 V
t f
50
t r
100
t s
(continued)
200
300