PN200 Fairchild Semiconductor, PN200 Datasheet - Page 3

• Manufacturer Part Number: PN200
• Description: TRANSISTOR GP PNP 45V TO-92
• Manufacturer: Fairchild Semiconductor

Specifications of PN200

• Transistor Type: PNP
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 20mA, 200mA
• Current - Collector Cutoff (max): 50nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 1V
• Power - Max: 625mW
• Frequency - Transition: 250MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: - 6 V
• Continuous Collector Current: 0.5 A
• Maximum Dc Collector Current: 0.5 A
• Power Dissipation: 625 mW
• Maximum Operating Frequency: 250 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 100
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics
0.01
1.2
0.8
0.6
0.4
0.2
4
3
2
1
0
100
0.1
10
1
0
0.1
1
25
Ic =
Voltage vs Collector Current
V
- 40
Collector Saturation Region
CB
= 10
vs Ambient Temperature
Collector-Cutoff Current
Base-Emitter Saturation
°
C
= 50V
100 uA
I - COLLECTOR CURRE NT (mA)
T - AMBIE NT TEMPERATURE ( C)
C
A
I - BASE CURRENT (uA)
50
B
1
25
°
C
75
50 mA
100
10
300
(continued)
100
700
125
300 mA
°
°
C
100
2000 4000
Ta = 25°C
300
125
95
90
85
80
75
70
0.8
0.6
0.4
0.2
100
0.1
10
1
0
0.1
0.1
PNP General Purpose Amplifier
Input and Output Capacitance
Collector-Emitter Breakdown
Base Emitter ON Voltage vs
- 40
Voltage with Resistance
Between Emitter-Base
°
I - COLLECTOR CURRE NT (mA)
V
C
vs Reverse Voltage
C
CE
Collector Current
1
- COLLECTOR VOLTAGE (V)
1
RESISTANCE (k )
1
25
°
10
C
10
10
Cib
125
V
100
f = 1.0 MHz
CE
°
= 5V
C
Cob
(continued)
100 200
1000
100