BSS63 Fairchild Semiconductor, BSS63 Datasheet - Page 3

• Manufacturer Part Number: BSS63
• Description: TRANSISTOR PNP 100V SOT-23
• Manufacturer: Fairchild Semiconductor

Specifications of BSS63

• Transistor Type: PNP
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 100V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 2.5mA, 25mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 10mA, 1V
• Power - Max: 350mW
• Frequency - Transition: 50MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 100 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 0.2 A
• Maximum Dc Collector Current: 0.2 A
• Power Dissipation: 350 mW
• Maximum Operating Frequency: 50 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 30
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

100
Typical Characteristics
0.1
0.8
0.6
0.4
0.2
10
1
1
0.1
25
80
60
40
20
0
Voltage vs Collector Current
0.1
V
Input and Output Capacitance
Base-Emitter Saturation
vs Ambient Temperature
Collector-Cutoff Current
CB
I
- 40 °C
C
T - AM BIENT TE MPE RATURE ( C)
= 10 0V
50
A
- COLLECTOR CURRENT ( mA)
V
vs Reverse Voltage
R
- REVERSE BIAS VOLTAGE(V)
25 °C
1
1
75
125 °C
100
10
C
10
eb
125
= 10
°
f = 1.0 MHz
C
100
cb
150
100
0.8
0.6
0.4
0.2
1
0.1
350
300
250
200
150
100
50
220
210
200
190
180
170
0
Base-Emitter ON Voltage vs
0
PNP General Purpose Amplifier
0.1
- 40 °C
Collector-Emitter Breakdown
I
C
Voltage with Resistance
Collector Current
- COLLECTOR CURRENT (mA)
Between Emitter-Base
25
25 °C
Ambient Temperature
Power Dissipation vs
1
1
TEMPERATURE ( C)
50
RESISTANCE (k )
125 °C
10
75
SOT-23
10
100
o
V
C E
100
= 5V
125
(continued)
100
1000
150
3