BSS63 Fairchild Semiconductor, BSS63 Datasheet - Page 2

• Manufacturer Part Number: BSS63
• Description: TRANSISTOR PNP 100V SOT-23
• Manufacturer: Fairchild Semiconductor

Specifications of BSS63

• Transistor Type: PNP
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 100V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 2.5mA, 25mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 10mA, 1V
• Power - Max: 350mW
• Frequency - Transition: 50MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 100 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 0.2 A
• Maximum Dc Collector Current: 0.2 A
• Power Dissipation: 350 mW
• Maximum Operating Frequency: 50 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 30
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

V
V
V
I
I
OFF CHARACTERISTICS
h
V
V
f
Symbol
CBO
EBO
ON CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
T
FE
NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.
(BR)CEO
(BR)CBO
(BR)EBO
CE(
BE(
Typical Characteristics
Electrical Characteristics
Spice Model
PNP (Is=21.48f Xti=3 Eg=1.11 Vaf=100 Bf=132.1 Ne=1.375 Ise=21.48f Ikf=.1848 Xtb=1.5 Br=3.661 Nc=2 Isc=0
PNP (Is=21.48f Xti=3 Eg=1.11 Vaf=100 Bf=132.1 Ne=1.375 Ise=21.48f Ikf=.1848 Xtb=1.5 Br=3.661 Nc=2 Isc=0
Ikr=0 Rc=1.6 Cjc=17.63p Mjc=.5312 Vjc=.75 Fc=.5 Cje=73.39p Mje=.3777 Vje=.75 Tr=1.476n Tf=641.9p Itf=0
Ikr=0 Rc=1.6 Cjc=17.63p Mjc=.5312 Vjc=.75 Fc=.5 Cje=73.39p Mje=.3777 Vje=.75 Tr=1.476n Tf=641.9p Itf=0
Vtf=0 Xtf=0 Rb=10)
Vtf=0 Xtf=0 Rb=10)
sat
sat
200
150
100
)
)
50
0.0001
0
Typical Pulsed Current Gain
V
- 40 °C
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Cutoff Current
Emitter-Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain - Bandwidth Product
CE
vs Collector Current
= 5V
I
0.001
C
- COLLECTOR CURRENT (A)
25 °C
125 °C
Parameter
0.01
0.1
TA = 25°C unless otherwise noted
1
I
I
I
V
V
V
I
I
I
I
f = 35 MHz
I
C
C
E
C
C
C
C
C
CB
CB
EB
= 100 A, I
= 10 A, I
= 1.0 A, I
= 10 mA, V
= 25 mA, V
= 25 mA, I
= 25 mA, I
= 25 mA, V
= 90 V, I
= 90 V, I
= 6.0 V, I
Test Conditions
E
E
E
C
B
B
C
0.4
0.3
0.2
0.1
B
CE
CE
CE
= 0
= 0
= 0, T
=2.5 mA
=2.5 mA
= 0
0
= 0
= 0
0.1
= 1.0 V
= 1.0 V
= 5.0,
PNP General Purpose Amplifier
Voltage vs Collector Current
Collector-Emitter Saturation
A
= 10
= 150 C
I
C
- COLLECTOR CURRENT (mA)
1
125 °C
Min
100
110
6.0
30
30
50
10
Max
0.25
100
200
0.9
50
25 °C
- 40 °C
(continued)
Units
MHz
nA
nA
V
V
V
V
V
100
A